研究目的
Investigating the implementation of a micro-fabricated wideband band-stop filter on a gallium arsenide (GaAs) substrate using integrated passive device technology for effective realization in wireless communication.
研究成果
The fabricated WBBSF shows promising RF performance on the GaAs substrate, which is imperative for the highly integrated wideband RF modules. The filter resonates at a frequency of 10.72 GHz, generating an attenuation level of more than ? 38 dB in the stop band.
研究不足
The fabrication complexity of modeling the multiple layer and the slight discrepancy in the measurement for the S21 frequency response due to the fabrication complexity.
1：Experimental Design and Method Selection:
The design of the BSF was carried out via micro-fabrication called IPD technology, incorporating an air-bridge structure to enhance design flexibility and achieve excellent radio-frequency performance.
2：Sample Selection and Data Sources:
A GaAs substrate was used for the fabrication of the proposed BSF with the relative permittivity of
3：85 and loss tangent of List of Experimental Equipment and Materials:
The fabrication process includes the use of a GaAs substrate, SiNx passivation layer, Ti/Au metal layers, and photoresist for patterning.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves wafer cleaning, SiNx deposition, photoresist patterning, metal layer deposition, and the creation of an air-bridge structure.
5：Data Analysis Methods:
The frequency response of the filter was measured using a vector network analyzer (VNA) to analyze the S-parameters (S11 and S21).
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