研究目的
Investigating the synthesis of centimeter sized ultrathin GaN and InN nanosheets through the ammonolysis of liquid metal derived oxides for integration into emerging electronics and optical devices.
研究成果
The developed synthesis technique allows for the deposition of large area, highly crystalline 2D GaN and InN nanosheets, suitable for the development of optoelectronic and electronic 2D devices. The method provides a scalable approach for integrating 2D morphologies of important semiconductors into emerging devices.
研究不足
Higher synthesis temperatures were explored to decrease oxygen substitution but complete removal of oxygen could not be achieved. The process is not conducive to substrates featuring high surface roughness.
1：Experimental Design and Method Selection:
The synthesis relies on a two-step process utilizing the squeeze-printing of 2D Ga2O3, which is then converted into GaN using ammonolysis in a tubular furnace.
2：Sample Selection and Data Sources:
Liquid gallium metal was allowed to oxidize in air to form Ga2O3 nanosheets, which were then converted into GaN.
3：List of Experimental Equipment and Materials:
Liquid gallium, SiO2 terminated silicon wafers, urea as an ammonia precursor, tubular furnace.
4：Experimental Procedures and Operational Workflow:
A droplet of liquid gallium was squeezed between two SiO2/Si wafers to transfer the Ga2O3 layer, which was then subjected to ammonolysis at 800 °C.
5：Data Analysis Methods:
AFM, HRTEM, XPS, UV-vis analysis, Hall-effect measurements.
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