研究目的
To fabricate shallow n–p and p–n junctions in GaAs using ion implantation of S and Zn followed by millisecond-range flash lamp annealing (FLA) for integration with CMOS technology, focusing on suppressing dopant diffusion, recrystallizing the implanted layer, and activating dopants.
研究成果
Shallow junctions in GaAs were successfully fabricated using ion implantation and ms-range FLA, with effective suppression of dopant diffusion, full dopant activation, and defect removal. The n-GaAs:Zn junction showed high current ratio (up to 1.7 × 10^7) and good ideality factor (1.3), demonstrating the potential for CMOS integration. Future work could optimize surface passivation and explore other materials.
研究不足
The study is limited to GaAs and specific dopants (S and Zn); surface passivation was not used, which may affect junction quality, especially for n-p junctions. The FLA process parameters (time and energy density) might not be optimized for all conditions, and the carrier mobility is relatively low due to scattering effects.
1：Experimental Design and Method Selection:
The study uses ion implantation of S and Zn into GaAs wafers to form shallow junctions, followed by millisecond-range flash lamp annealing (FLA) for recrystallization and dopant activation. Theoretical models include SRIM simulations for implantation parameters and Raman spectroscopy for carrier concentration and mobility analysis.
2：Sample Selection and Data Sources:
n-type GaAs wafers doped with Te and p-type GaAs doped with Zn were used. Implantation energies and fluences were calculated using SRIM simulations to achieve specific doping ranges and peak concentrations.
3：List of Experimental Equipment and Materials:
Equipment includes an FLA tool with Xe-lamps, secondary ion mass spectrometry (SIMS) system (Cameca IMS7f), μ-Raman spectroscopy setup with a 532 nm Nd:YAG laser, photoluminescence (PL) setup with a 405 nm laser, Jobin Yvon Triax 550 monochromator, InGaAs detector, Dektak 8 stylus profilometer, and sputtering system for Au contacts. Materials include GaAs wafers, S and Zn ions for implantation, and Au for electrical contacts.
4：Experimental Procedures and Operational Workflow:
Samples were implanted with S or Zn at specified energies and fluences, annealed using FLA for 10 or 20 ms at energy densities up to 85 J cm^-2, characterized by SIMS for dopant distribution, μ-Raman and PL for optical properties, and I-V measurements for electrical properties. Au contacts were sputtered for I-V tests.
5：Data Analysis Methods:
Data were analyzed using Gaussian deconvolution for Raman spectra, Equations (3) and (5) for carrier concentration and mobility from Raman data, and I-V characteristics to extract ideality factor and current ratios.
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