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Study on Charge transportation and scaling behavior of CsPbI3 microwires

DOI:10.1016/j.ceramint.2018.12.071 期刊:Ceramics International 出版年份:2018 更新时间:2025-09-23 15:23:52
摘要: Cesium lead iodide (CsPbI3) has been prepared by a new experimental hazard free precipitation technique. X-ray diffraction spectra have been interpreted with Rietveld refinement which assures the orthorhombic phase of CsPbI3. Energy dispersive X-ray fluorescence spectra confirms the formation of ternary compound. Orthorhombic to cubic phase transition has been studied by observing hysteresis loop in R(T)-T plot for forward-reverse temperature scan. The intra-grain and inter-grain contribution of CsPbI3 to dielectric relaxation has been accounted by fitting the complex impedance plot (Cole-Cole plot). The value of FWHM in Z″(ω)-lnf or M″(ω)-lnf plot is greater than 1.141 decades which reveals the non-Debye type relaxation within material. The broad relaxation peak signifies that there is a distribution of relaxation time over a mean value. Moreover, Z″ & M″ have been plotted in scaled coordinate to check whether the distribution of relaxation time is temperature dependent or not. The frequency dependent relative permittivity represents the decreases of polarizations with frequency which have been successfully analyzed by Koop’s theory. Here, activation energies are equal for different formalism, suggests that the same type charge carriers involved in conduction as well as relaxation process. Ac conductivity has been interpreted by using Jonncher’s power law and frequency exponent (n) increases with temperature which suggests the presence small polaron hopping mechanism.
作者: Prasenjit Maji,Souvik Chatterjee,Sachindranath Das
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To investigate the charge transportation and scaling behavior of CsPbI3 microwires, including synthesis, structural analysis, phase transition, dielectric properties, and conduction mechanisms.

CsPbI3 microwires were successfully synthesized using a hazard-free method and exhibited stable orthorhombic phase. Phase transition to cubic phase was confirmed via hysteresis in DC resistivity. Dielectric analysis revealed non-Debye type relaxation, temperature-independent distribution of relaxation times, and small polaron hopping as the conduction mechanism. Activation energies were consistent across different formalisms, indicating the same charge carriers involved in conduction and relaxation. The research provides insights into the electrical properties of CsPbI3, with implications for optoelectronic applications, and suggests future studies on device integration and stability enhancements.

The study is limited to CsPbI3 microwires synthesized via a specific method; results may not generalize to other morphologies or synthesis routes. The electrical measurements are constrained to the specified temperature and frequency ranges, and potential impurities or defects in the material could affect outcomes. Further optimization could involve varying synthesis parameters or extending measurements to broader conditions.

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