研究目的
To investigate how the interaction of the Al film and the amorphous Ge (a-Ge) substrate affects the microstructural and texture evolution of the Al film during thermal evaporation growth, and to provide a unique way to tailor the texture of metal thin films with the help of high atomic mobility at the metal-semiconductor interface.
研究成果
The a-Ge substrate significantly alters the microstructure and texture of Al films, changing the preferred orientation from (111) to (110) and reducing grain size due to high Ge atom mobility at the interface. This is attributed to a shift from 3D to 2D nucleation and grain-boundary wetting effects. The findings offer a novel method for controlling metal film texture through substrate interactions.
研究不足
The study is limited to Al films and specific substrates (a-SiO2 and a-Ge); results may not generalize to other metals or substrates. The experiments were conducted at room temperature, and effects at other temperatures are not explored. The mechanisms rely on thermodynamic calculations and assumptions about atomic mobility, which could have uncertainties.
1：Experimental Design and Method Selection:
The study compares Al films grown on amorphous SiO2 (a-SiO2) and amorphous Ge (a-Ge) substrates using thermal evaporation in an ultrahigh vacuum system. The rationale is to understand the role of substrate interaction on film microstructure and texture.
2：Sample Selection and Data Sources:
Si(001) wafers with native amorphous SiO2 layers (1-2 nm thick) were used as substrates. Two types of specimens were prepared: Al films on a-SiO2 and on a-Ge insertion layers (1 nm thick) deposited on a-SiO
3：List of Experimental Equipment and Materials:
Ultrahigh vacuum system (base pressure < 2e-10 mbar), Knudsen cells for Al and Ge evaporation, transmission electron microscope (TEM; CM 200, Philips), X-ray diffractometer (X'Pert MRD, PANalytical), electron backscatter diffraction camera (Hikari, EDAX), X-ray photoelectron spectroscopy system (Thermo VG Thetaprobe, Thermo Fisher Scientific), Auger electron spectroscopy microscope (JAMP-7830F, JEOL), and software for grain analysis (Nano Measurer) and orientation imaging (OIM, EDAX). Materials include Al and Ge sources, Si wafers, acetone, isopropanol, and nitrogen gas.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned with acetone and isopropanol, dried with nitrogen. For Al films on a-SiO2, Al was evaporated at 1100°C, 2 nm/min. For Al films on a-Ge, a 1 nm Ge layer was first deposited at 1400°C, 2 nm/min, then Al under same conditions. TEM, XRD, EBSD, XPS, and AES measurements were performed to analyze microstructure, texture, and composition.
5：Data Analysis Methods:
Grain sizes were determined using Nano Measurer software with statistical analysis of 500 grains. XRD patterns were analyzed for texture. EBSD data processed with OIM software. XPS and AES for elemental composition and depth profiling.
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X-ray Diffractometer
X'Pert MRD
PANalytical
Used for XRD measurements to analyze the texture of the Al films.
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X-ray Photoelectron Spectroscopy System
Thermo VG Thetaprobe
Thermo Fisher Scientific
Used for XPS measurements to analyze surface composition.
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Auger Electron Spectroscopy Microscope
JAMP-7830F
JEOL
Used for AES depth profiling to measure concentration changes with depth.
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Transmission Electron Microscope
CM 200
Philips
Used to investigate the microstructures of the Al films in plan-view.
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Electron Backscatter Diffraction Camera
Hikari
EDAX
Used for EBSD measurements to determine grain orientations.
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Grain Analysis Software
Nano Measurer
Used to determine grain sizes from TEM images.
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Orientation Imaging Microscopy Software
OIM
EDAX
Used for post-measurement processing of EBSD data.
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Knudsen Cell
Used for thermal evaporation of Al and Ge sources.
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Ultrahigh Vacuum System
Used for film deposition with base pressure < 2e-10 mbar.
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