1：Experimental Design and Method Selection:

A nonvolatile memory device with a structure of Glass/ITO/PEDOT:PSS/MAPbI3/PMMA/Al was fabricated. The MAPbI3 film was prepared using a two-step sequential process (PbI2 layer + MAI conversion). KI was added to the PbI2 precursor to study its doping effect on memory properties.

2：Sample Selection and Data Sources:

ITO-coated glass substrates were used. Materials included PbI2, KI, DMF, IPA, CB, PMMA, PEDOT:PSS, and MAI purchased from specified suppliers.

3：List of Experimental Equipment and Materials:

Equipment included an ultrasonic cleaner, oven, N2-filled glove box, spin coater, hot plate, thermal evaporator, HR-SEM (Hitachi SU8000), XRD (Bruker D8 Advance), photoluminescence spectrometer (Horiba Jobin Yvon LabRAM HR), XPS (ULVAC-PHI Quantera SXM), and I-V measurement system (Agilent E5270B). Materials: PbI2 (

4：9985%), KI (995%), DMF (8%), IPA (5%), CB (8%), PMMA, PEDOT:

PSS, MAI (>98%).

5：Experimental Procedures and Operational Workflow:

Substrates were cleaned and dried. PEDOT:PSS was spin-coated and baked. KI-doped PbI2 precursor was prepared and spin-coated, then baked. MAI/IPA was spin-coated and annealed to form MAPbI3, followed by washing with IPA and further annealing. PMMA was spin-coated and baked. Al top electrode was deposited by thermal evaporation.

6：Data Analysis Methods:

Surface morphology was analyzed by SEM, crystalline phase by XRD, photoluminescence by spectrometer, element distribution by XPS, and I-V characteristics by Agilent E5270B. Conduction mechanisms were fitted using SCLC and Ohmic models.