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Introduction of oxygen vacancies into hematite in local reducing atmosphere for solar water oxidation

DOI:10.1016/j.solener.2018.12.059 期刊:Solar Energy 出版年份:2019 更新时间:2025-09-23 15:23:52
摘要: Sn Doping and creation of oxygen vacancies have been adopted universally to overcome the poor electric conductivity and unfavorable hole diffusion length of α-Fe2O3 photoanodes. Generally, Sn doping is realized via longitudinal migration of tin element from FTO (fluorine-doped tin oxide) substrates into α-Fe2O3 at high temperature. To introduce oxygen vacancies along with Sn into hematite for further promoting its electric conductivity, we have created a local reducing atmosphere via partial oxidation of graphite while doping hematite with Sn. The donor density of the resultant Fe2O3 photoanode annealed on graphite (G-Fe2O3) at 770 °C for 20 min is increased to ~1.7 times that of the counterpart annealed on SiO2 powders (S-Fe2O3), indicating that the electric conductivity of hematite is improved after introduction of oxygen vacancies. Moreover, oxygen vacancies have been demonstrated to significantly reduce the charge transfer resistance of Sn doped hematite. Consequently, the photocurrent density of G-Fe2O3 is enhanced remarkably (~70%) compared with S-Fe2O3. However, the improvement in photocurrent density due to oxygen vacancies becomes less significant when more Sn is doped into hematite. The strategy for creation of oxygen vacancies reported here can be extended to other photoanodes for better understanding the effect of oxygen vacancies on PEC performance.
作者: Yi Zhou,Mingkun Yan,Junxian Hou,Yakun Niu,Dawei Ni,Haiyan Shen,Ping Niu,Ying Ma
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To introduce oxygen vacancies into hematite (α-Fe2O3) photoanodes along with Sn doping to improve electric conductivity and photoelectrochemical performance for solar water oxidation.

The study successfully introduces oxygen vacancies into Sn-doped hematite using a simple graphite-based annealing method, leading to enhanced electric conductivity, reduced charge transfer resistance, and improved photoelectrochemical performance for solar water oxidation, with up to 70% increase in photocurrent density. Oxygen vacancies improve both charge transport and surface charge separation efficiencies. The strategy is effective and can be extended to other oxide photoanodes.

The improvement in photocurrent density due to oxygen vacancies is less significant at higher Sn doping levels. The method may not be universally applicable to all photoanodes without optimization, and the conductivity of FTO substrate can degrade with increased annealing temperature or time.

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