研究目的
Investigating the effect of aluminum target sputtering mode and sputtering power on the properties of aluminum nitride thin films deposited by reactive high power pulsed magnetron sputtering.
研究成果
Sputtering the aluminum target in transitional mode with high sputtering power is optimal for depositing AlN thin films with dense microstructures, (002) out-of-plane texture, low residual stress, and low surface roughness. This approach enhances plasma density and ion-to-neutral ratio, improving film quality for microelectronic and optoelectronic applications.
研究不足
The study is limited to specific deposition parameters (e.g., pulse widths up to 80 μs, nitrogen flows up to 15 sccm) and does not explore higher powers or different reactive gases. No substrate heating was used, which might affect film properties. The use of a limiting resistor could influence discharge characteristics.
1：Experimental Design and Method Selection:
AlN thin films were deposited using reactive high power pulsed magnetron sputtering (HPPMS) with varying nitrogen gas flows and pulse widths to control target sputtering modes (metallic, transitional, compound) and sputtering power. An unbalanced magnetron sputtering system was employed.
2：Sample Selection and Data Sources:
Silicon (100) wafers were used as substrates. Samples were prepared with different nitrogen gas flows (0 to 15 sccm) and pulse widths (50, 60, 70, 80 μs).
3：List of Experimental Equipment and Materials:
Equipment includes an unbalanced magnetron sputtering system, pulsed power supply (HPS-450D), oscilloscope (TDS-220), optical emission spectroscopy system (AvaSpec-2048-7-USB2, AvaLIBS-Specline-AMS), stylus profiler (Ambios XP-2), energy dispersive spectroscopy, X-ray photoelectron spectroscopy (Escalab 250Xi), X-ray diffractometer (X'pert), atomic force microscopy (Multimode 8), field emission scanning electron microscope (JSM-7100F). Materials include aluminum target (99.95% pure), nitrogen gas (99.999% purity), argon gas (99.999% purity), and silicon wafers.
4：95% pure), nitrogen gas (999% purity), argon gas (999% purity), and silicon wafers. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The system was pumped to base pressure below 8e-4 Pa. Target was cleaned by DC magnetron sputtering. Substrate was cleaned by glow discharge. Films were deposited with applied DC bias (-50 V) for 30 minutes without additional heating. Target discharge and plasma characteristics were monitored using oscilloscope and OES. Film properties were measured post-deposition.
5：Data Analysis Methods:
Data analyzed using techniques such as wafer curvature method for residual stress, EDS for composition, XPS for chemical bonding, XRD for crystalline structure, AFM for surface roughness, and FE-SEM for morphology.
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oscilloscope
TDS-220
Tektronix
To record the target voltage and current waveforms.
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optical emission spectroscopy system
AvaSpec-2048-7-USB2
Avantes
To investigate plasma composition in front of the target and substrate.
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optical emission spectroscopy system
AvaLIBS-Specline-AMS
Avantes
To investigate plasma composition in front of the target and substrate.
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stylus profiler
XP-2
Ambios
To measure film thickness and calculate deposition rate.
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X-ray photoelectron spectroscopy
Escalab 250Xi
ThermoFisher
To study chemical bonding of the films.
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X-ray diffractometer
X'pert
PANalytical
To explore crystalline structure of the films.
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atomic force microscopy
Multimode 8
Bruker
To measure surface morphologies of the films.
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field emission scanning electron microscope
JSM-7100F
JEOL
To observe microstructures of the films.
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pulsed power supply
HPS-450D
Chengdu Pulsetech Electrical
To sputter the aluminum target in high power pulsed magnetron sputtering.
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