研究目的
To study the impact of using III-nitride semiconductors (GaN, AlN) as substrates on the critical temperature and structural properties of ultrathin NbTiN superconducting films, and to fabricate and test superconducting nanowire single photon detectors on these substrates.
研究成果
The use of III-nitride substrates, particularly AlN with its close lattice match to NbTiN, significantly improves the critical temperature and reduces roughness of ultrathin NbTiN films. This enhancement is attributed to better epitaxial growth and reduced misfit relaxation. Fabricated SNSPDs on AlN substrates show high external quantum efficiencies that align well with theoretical models, validating the material improvements for practical applications in photodetection.
研究不足
The study is limited to specific III-nitride substrates and deposition conditions; the improvement mechanisms, such as roughness reduction due to lattice matching, may not generalize to other materials or thicker films. The SNSPD efficiency measurements show variations and are not fully saturated at all wavelengths, indicating potential areas for optimization in device design and fabrication.
1:Experimental Design and Method Selection:
The study involves depositing ultrathin NbTiN films on various III-nitride substrates using reactive magnetron co-sputtering at room temperature to investigate the impact of substrate lattice mismatch on superconducting properties. Structural and electrical characterizations are performed using techniques like X-ray reflectivity, X-ray diffraction, high-resolution transmission electron microscopy, and atomic force microscopy. Superconducting nanowire single photon detectors are fabricated and tested to assess application suitability.
2:Sample Selection and Data Sources:
Substrates include AlN-on-sapphire, GaN/AlN heterostructure on sapphire, and GaN substrates (both conductive and semi-insulating). Samples are listed in Table 1 of the paper with specific details on substrate type and properties.
3:List of Experimental Equipment and Materials:
Equipment includes an ultra-high vacuum chamber for sputtering, X-ray diffractometer (Panalytical Empyrean with cobalt anode), transmission electron microscope (FEI-Tecnai operated at 200kV), atomic force microscope (Dimension 3100 system), and facilities for e-beam lithography and plasma etching. Materials include Nb and Ti targets, Ar and N2 gases, and various III-nitride substrates.
4:Experimental Procedures and Operational Workflow:
Substrates are cleaned and treated with Ar plasma before deposition. NbTiN films are deposited with specific power settings and gas mixtures. Post-deposition, samples undergo X-ray reflectivity, XRD, HRTEM, and AFM analyses. SNSPDs are fabricated using e-beam lithography and plasma etching, then tested in liquid helium with laser excitation.
5:Data Analysis Methods:
Data analysis includes fitting X-ray reflectivity with GenX software, calculating lattice parameters from XRD, measuring roughness from AFM, and simulating absorption efficiencies using finite-difference time-domain calculations with RSoft FullWave software.
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X-ray diffractometer
Empyrean
Panalytical
Used for X-ray reflectivity and X-ray diffraction measurements to analyze the structural properties of the NbTiN films and substrates.
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Transmission electron microscope
Tecnai
FEI
Used for high-resolution transmission electron microscopy to study the microstructure and epitaxial relationships of the NbTiN films.
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Atomic force microscope
Dimension 3100
Used in tapping mode to measure the surface morphology and roughness of the NbTiN films.
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Magnetron sputtering system
Used for reactive magnetron co-sputtering to deposit NbTiN films on substrates.
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Quartz crystal monitor
Used to monitor the deposition rate during sputtering.
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E-beam lithography system
Used to pattern the NbTiN films into meander structures for SNSPD fabrication.
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Inductively-coupled plasma etcher
Used for etching the patterned NbTiN films.
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Laser diodes
Used for optical excitation of the SNSPDs at specific wavelengths.
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Software
GenX
Used for fitting X-ray reflectivity data.
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Software
RSoft FullWave
Used for finite-difference time-domain calculations to simulate absorption efficiencies.
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