研究目的
To evaluate the thermoelectric properties of a GTO thin film thermoelectric conversion device fabricated by the mist CVD method, focusing on the dependence of Ga:Sn ratio and dilution gas on performance.
研究成果
The GTO thin film thermoelectric device fabricated by mist CVD achieved a maximum power factor of 0.0179 mW/mK2 with Ga:Sn=1:1 and dilution gas=5 L/min, indicating optimal carrier density. This demonstrates the potential of GTO as a rare-metal-free alternative for thermoelectric applications, with recommendations for future work on carrier concentration optimization.
研究不足
High resistance made some samples unmeasurable (e.g., Ga:Sn=2:1 and dilution gas=1 L/min). The study is limited to specific Ga:Sn ratios and dilution gas conditions; broader variations or other parameters were not explored. Optimization of carrier concentration is needed for further improvement.
1：Experimental Design and Method Selection:
The study used the mist CVD method for depositing GTO thin films on quartz substrates, chosen for its safety, low cost, and environmental friendliness. Thermoelectric properties were evaluated based on variations in Ga:Sn ratio and dilution gas flow rate.
2：Sample Selection and Data Sources:
GTO thin films were deposited with different Ga:Sn ratios (1:1, 1:2, 1:3, 2:1) and dilution gas flow rates (1, 5, 10 L/min). Data were collected from measurements of Seebeck coefficient, electrical conductivity, and power factor.
3：List of Experimental Equipment and Materials:
Quartz substrates, precursor solutions for Ga and Sn, mist CVD system, vacuum deposition system for titanium and gold electrodes.
4：Experimental Procedures and Operational Workflow:
Films were deposited at 400°C for 10 minutes. After deposition, titanium and gold electrodes were vapor-deposited. Thermoelectric properties were measured for each sample condition.
5：Data Analysis Methods:
Relationships between Seebeck coefficient and electrical conductivity were plotted, and power factor was calculated. Comparisons were made with other materials based on literature.
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