1：Experimental Design and Method Selection:

The study employs nitrogen ion implantation to reduce graphene oxide (GO) and modify its electrical properties for gas sensing applications. The rationale is to achieve controlled reduction with minimal defects compared to thermal and chemical methods. Theoretical models include SRIM simulations for energy loss calculations.

2：Sample Selection and Data Sources:

GO is synthesized from graphite flakes using a modified Hummer's method, spray-coated on glass substrates, and dried. Samples are implanted with 100 keV nitrogen ions at fluences of 1E15, 5E15, and 1E16 ions/cm

3：List of Experimental Equipment and Materials:

Equipment includes Low Energy Ion Beam Facility (LEIBF) at IUAC for implantation, X-ray diffraction spectrometer (Bruker Advanced D8), Raman spectrometer (Horiba Jobin Yvon HR 800), FESEM (Zeiss SIPRA 55), optical microscope (Olympus BX51P), Agilent 2962B source meter, and a homemade sensing setup. Materials include graphite flakes (Sigma-Aldrich), KMnO4, H2SO4, HCl, H2O2 (Merck), and silver electrodes.

4：Experimental Procedures and Operational Workflow:

GO synthesis involves oxidation of graphite, exfoliation by ultrasonication, spray coating, and drying. Implantation is performed in a vacuum chamber with raster scanning. Characterization includes XRD, Raman, FESEM, EDS, and I-V measurements. Sensor fabrication involves depositing silver electrodes and annealing. Sensing measurements are conducted by exposing the sensor to methanol vapor and N2 gas, monitoring resistance changes.

5：Data Analysis Methods:

Data analysis includes calculating IG/ID ratio from Raman spectra, resistance from I-V curves, and sensor response using formulas for change in resistance and percentage response. Statistical techniques involve linear fitting for concentration dependence.