研究目的
To grow morphology-controlled vanadium dioxide (VO2) nanostructures on Si wafer and exfoliated graphene using a vapor transport method, and investigate the growth mechanisms and differences based on substrate and pressure conditions.
研究成果
Thick polycrystalline VO2 platelets were successfully grown on graphene nanosheets under both low (0.4 kPa) and atmospheric (101 kPa) pressure conditions, while 1D VO2 nanowires were only grown on SiO2/Si substrate under low pressure. The selective growth on graphene is attributed to preferential nucleation at functional groups like carbonyl, which increase surface energy. This finding can be applied to fabricate high-performance electrode materials for secondary batteries and sensitive materials for gas sensors.
研究不足
The study is limited to specific growth conditions (pressures of 0.4 kPa and 101 kPa, substrate temperatures up to 800°C) and uses exfoliated graphene, which may have variability in layer number and quality. The vapor transport method may not be scalable for large-area applications, and the mechanisms are inferred from morphological and spectroscopic analyses without in-situ monitoring.
1:Experimental Design and Method Selection:
The vapor transport method was used with a horizontal tube furnace system to grow crystalline VO2 nanostructures on SiO2(300 nm)/Si and exfoliated graphene substrates. The method was chosen for its ability to produce crystalline nanostructures.
2:Sample Selection and Data Sources:
Si wafer pieces (1 cm x 1 cm or 2 cm x 2 cm) with a 300 nm SiO2 layer were used. Graphene nanosheets were exfoliated from high oriented pyrolytic graphite (HOPG) using 3M Scotch tape and transferred to the Si wafer. The number of graphene layers was confirmed by Raman spectroscopy.
3:List of Experimental Equipment and Materials:
Equipment included a horizontal tube furnace, alumina crucible, capacitance manometer (MKS Instruments, 626B11TQE), FE-SEM (FEI, Sirion), optical microscopy (Leica, DM500), Raman spectroscopy (Renishaw, inVia Qontor and NOST, FEX), TEM (JEOL, JEM-2100F HR), FIB (FEI, Helios NanoLab), and XPS (ThermoFisher Scientific, K-Alpha). Materials included vanadium(IV) oxide powder (V2O4,
4:9%, Sigma-Aldrich, No. 215821), high purity Ar gas (999%), acetone, ethyl alcohol, de-ionized water, and 3M Scotch tape. Experimental Procedures and Operational Workflow:
Substrates were cleaned ultrasonically in acetone, ethyl alcohol, and de-ionized water, then dried with nitrogen. Graphene was transferred to Si wafer. The source material (V2O4 powder) was vaporized at 1000°C in the furnace. Substrates were placed downstream at temperatures from 500°C to 800°C. The chamber base pressure was under 5 x 10^-2 Pa, purged with Ar gas. Carrier gas flow rate was 50-1000 sccm, and growth pressure was maintained at
5:4 kPa or 101 kPa using a gate valve. Growth duration was 5 hours. Morphology and crystallography were analyzed using FE-SEM, optical microscopy, Raman spectroscopy, TEM, and XPS. Data Analysis Methods:
Raman spectra were used to identify VO2 phases and graphene quality. TEM and FE-SEM images were analyzed for morphology and crystal structure. XPS peak fitting with Avantage software was used to analyze functional groups on substrates.
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capacitance manometer
626B11TQE
MKS Instruments
Measuring growth pressure during the experiment
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FE-SEM
Sirion
FEI
Investigating surface morphology of as-grown VO2 nanostructures
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optical microscopy
DM500
Leica
Observing and imaging the grown nanostructures
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TEM
JEM-2100F HR
JEOL
Analyzing crystal structure and cross-sectional properties of VO2 nanostructures
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FIB
Helios NanoLab
FEI
Preparing cross-sectional TEM samples by milling
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XPS
K-Alpha
ThermoFisher Scientific
Analyzing functional groups on substrate surfaces
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vanadium(IV) oxide powder
No. 215821
Sigma-Aldrich
Source material for vapor transport growth of VO2 nanostructures
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Raman spectroscopy
inVia Qontor
Renishaw
Checking quality and number of layers of graphene nanosheets
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Raman spectroscopy
FEX
NOST
Characterizing crystallographic properties of VO2 nanostructures
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HOPG
No. 43834
Alfa Aesar
Source for exfoliating graphene nanosheets
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3M Scotch tape
3M
Mechanically exfoliating graphene from HOPG
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