摘要： Two types of anodic niobium-oxide nanofilms were synthesized via anodization of an Al/Nb bilayer sputter-deposited onto a SiO2-coated Si wafer. Type I nanofilm was composed of a 200 nm thick NbO2 layer holding the upright-standing 650 nm long, 50 nm wide, and 70 nm spaced Nb2O5 nanorods, of 7·109 cm?2 density, whereas the Type II nanofilm had similarly long but bigger Nb2O5 nanorods, 100 nm wide, 220 nm spaced, and of 8·108 cm?2 density, aligned directly on a niobium metal without any buffering oxide layer, which was achieved for the first time. Each film was then incorporated in an advanced 3-D architecture and multilayer layout on a silicon chip comprising 33 microsensors, with variable sizes and tuned electrical characteristics, by combining the high-temperature vacuum or air annealing, sputter-deposition, and lift-off photolithography to form Pt/NiCr top electrodes and a multifunctional SiO2 interlayer, chemical etching, laser dicing, and ultrasonic wire-bonding. The proposed on-chip sensor solution allowed for a sensitive, fast, and highly selective (toward NH3 and CH4) detection of hydrogen gas. Comprehensive gas sensing tests performed for Type II nanofilm ultimately confirmed the presence of a Schottky-type sensing mechanism, the contribution, however, being substantially weaker than that due to reactions over the surface of the oxide nanorods, especially when the rods show a transition from fully to partially depleted states when interacting with H2 gas. The film formation and chip fabrication technologies may be transferable to other PAA-assisted 1-dimensional metal-oxide nanomaterials suitable for on-chip gas sensing.