研究目的
To develop a novel organic coating assisted picosecond UV laser drilling method for fabricating high-quality through-silicon vias (TSVs) with minimized heat affected zone (HAZ) and improved geometry quality, and to study the effects of organic coating thickness and laser power on TSV quality.
研究成果
The novel organic coating assisted picosecond UV laser drilling method successfully fabricates high-quality TSVs with minimized HAZ and improved geometry. Increasing organic coating thickness and decreasing laser power reduce via diameter, with a minimum diameter of 15 μm and aspect ratio beyond 30 achieved. This method breaks the limitation that minimized via diameter must be at least equal to the laser spot size, enabling smaller TSVs for advanced 3D packaging applications.
研究不足
The study is limited to specific laser parameters and organic coating materials; potential limitations include scalability to industrial production, cost-effectiveness of the organic coating, and applicability to other substrate materials. Optimization may be needed for different laser systems or coating types.
1：Experimental Design and Method Selection:
The study employs a novel organic coating assisted picosecond UV laser drilling method to fabricate TSVs, focusing on reducing HAZ and improving via quality. A response surface method (RSM) with Box-Behnken design (BBD) is used to analyze the effects of laser parameters on via diameter.
2：Sample Selection and Data Sources:
N-type monocrystalline silicon wafers (4 inches diameter, 450 μm thickness, resistivity 0.001-1 Ω*cm) from Tebo Technology Co., Ltd, Harbin, are used. Polyimide tape (Kapton) from DuPont with 60 μm thickness serves as the organic coating.
3：001-1 Ω*cm) from Tebo Technology Co., Ltd, Harbin, are used. Polyimide tape (Kapton) from DuPont with 60 μm thickness serves as the organic coating.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Picosecond UV laser drilling machine (corporately developed with HAN's LASER), laser device (TruMicro 5000, max power 80 W, wavelength 1030 nm, pulse width 10 ps), clock multiplier, beam expander (M2<1.3, laser spot size ~26.5 μm), scanner, chiller, controller, motion system (XY platform with min resolution <1.5 μm, max velocity >0.5 m/s, working area 300mm*300mm), vacuum system, industry camera system (resolution 500 million pixels), deionized water (18 MΩ*cm), acetone for cleaning.
4：3, laser spot size ~5 μm), scanner, chiller, controller, motion system (XY platform with min resolution <5 μm, max velocity >5 m/s, working area 300mm*300mm), vacuum system, industry camera system (resolution 500 million pixels), deionized water (18 MΩ*cm), acetone for cleaning.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Clean silicon wafer with deionized water; coat with polyimide layers (1-3 layers, 60 μm each); use picosecond UV laser to drill vias according to TSV pattern; remove residual organic layers in ultrasonic bath with acetone for 30 min.
5：Data Analysis Methods:
Response surface method (RSM) and Box-Behnken design (BBD) are used to analyze the effects of laser peak power, number of percussions, and focal plane position on via diameter. Statistical analysis includes ANOVA to determine significance of variables.
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