研究目的
To study the effects of pretreatment with SPS as prewetting solution on the filling processes in three commercial bath systems for TSV copper filling, analyze the functional mechanism of SPS, and propose optimizations for void-free electrodeposition.
研究成果
Vacuum pretreatment with 20ppm SPS improves copper filling quality in TSVs by adsorbing SPS on copper surfaces, forming CuCl with chloride ions to accelerate deposition and reduce reaction impedance. Optimal results were achieved at low current densities (0.05 and 0.1 ASD) in SY2110 electrolyte, enabling bottom-up filling. Differences in bath compositions lead to varying effectiveness, suggesting the need for tailored optimizations in additive proportions and electric parameters for void-free deposition.
研究不足
The study is limited to specific bath systems and via dimensions; differences in bath components (e.g., sulphate vs. methanesulfonic acid systems) affect results. High current densities lead to seams, and prolonged plating times may cause corrosion or irregularities. The method may not generalize to all TSV configurations or electrolytes.
1：Experimental Design and Method Selection:
The study used electrochemical analyses (LSV and EIS) and electroplating experiments to investigate the effects of SPS pretreatment on copper filling in TSVs. A three-electrode configuration was employed for electrochemical tests, and electroplating was conducted under varying current densities with controlled parameters.
2：Sample Selection and Data Sources:
Chips with blind vias (120 μm diameter, 500 μm depth) were used. Three commercial bath systems (SY2110, SY2510, CZ606M) with specified compositions were tested.
3：List of Experimental Equipment and Materials:
Equipment included a platinum filament counter electrode, saturated calomel reference electrode, copper working electrode, LSV and EIS apparatus, electroplating setup, and SEM for observation. Materials included SPS accelerator, DI water, and commercial bath electrolytes.
4：Experimental Procedures and Operational Workflow:
Pretreatment involved immersing chips in 20ppm SPS solution for 10 minutes after 15 minutes of pretreatment. Electrochemical tests were performed with specific voltage ranges and frequencies. Electroplating was done at different current densities (0.05 to 0.4 ASD) with equal charge, at 20°C and 300 rpm rotation speed.
5：05 to 4 ASD) with equal charge, at 20°C and 300 rpm rotation speed.
Data Analysis Methods:
5. Data Analysis Methods: LSV and EIS data were analyzed to determine deposition rates and impedance. Filling effects were observed via SEM cross-sections, and results were interpreted to understand mechanism and propose optimizations.
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