研究目的
To fabricate densely packed InAs fins for nanoelectronic applications by growing high crystalline quality GaSb/InAs layers directly on nominal (001)-Si substrate and processing them using block copolymer lithography.
研究成果
High crystalline quality GaSb/InAs layers were successfully grown on Si substrate, with GaAs islands at the interface aiding dislocation management. Low-temperature InAs growth prevented interfacial melting. Block copolymer lithography enabled the creation of 15 nm wide InAs fins with vertical sidewalls. Early electrical measurements showed current flow, indicating potential for nanoelectronic applications, but further characterization is needed to confirm performance.
研究不足
Uncertainties remain about the actual number and size of the fins due to collapse during preparation; conduction in InAs fins is assumed and needs confirmation; interdiffusion at interfaces is not fully characterized; PS redeposition on sidewalls may affect device performance.
1：Experimental Design and Method Selection:
The study involves growing GaSb/InAs layers on Si substrate using MOCVD, followed by etching with a block copolymer mask to create InAs fins.
2：Sample Selection and Data Sources:
300 mm nominal (001)-Si substrates with an offcut angle of
3：11° along [110] direction were used. List of Experimental Equipment and Materials:
Equipment includes a 300 mm Applied Materials MOCVD reactor, Oxford Plasma Lab 100 ICP-RIE, ZEISS ULTRA SEM, FEI Helios NanoLab 450S FIB-SEM, FEI Titan (Ultimate) S/TEM, and FEI Titan Themis S/TEM. Materials include precursors like TESb, TBAs, TMGa, TMIn, block copolymers PS-r-PMMA and PS-b-PMMA, and gases such as hydrogen, Ar, O2, BCl3, SiCl
4：Experimental Procedures and Operational Workflow:
Substrates were deoxidized, heated, and exposed to TBAs; GaSb and InAs layers were grown; block copolymer mask was deposited, annealed, and etched; InAs was etched to form fins; structural and electrical characterizations were performed.
5：Data Analysis Methods:
Characterization techniques included SEM, STEM-HAADF, EDX, AFM, TOF-SIMS, and electrical I(V) measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
