研究目的
To investigate the growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method for application in high-temperature capacitors.
研究成果
TNO films annealed at 600 °C exhibit excellent dielectric and insulation properties, including high dielectric constant, low loss, small leakage current, and stability up to 300 °C, meeting ITRS requirements for high-temperature capacitors. The films show no dielectric dead layer and good thickness and field stability.
研究不足
The electrophoretic method may result in lower crystallinity compared to the LB method. Annealing above 600 °C leads to secondary phase formation, limiting the processing temperature. The study is focused on TNO films and may not generalize to other materials.
1:Experimental Design and Method Selection:
The study used the electrophoretic method to deposit TNO thin films at room temperature, with annealing to remove organic defects. Theoretical models for crystal structure analysis and electrical property measurements were employed.
2:Sample Selection and Data Sources:
KTNO ceramics were synthesized via solid-state reaction, exfoliated to produce TNO nanosheets, and deposited on Pt/SiO2/TiO2/Si substrates.
3:List of Experimental Equipment and Materials:
Equipment includes ball mill, furnace, electrophoresis setup, XRD, SEM, AFM, TEM, FTIR, EDS, LCR meter, impedance analyzer, semiconductor parameter analyzer. Materials include K2CO3, TiO2, Nb2O5, TBAOH, acetone, Pt electrodes.
4:Experimental Procedures and Operational Workflow:
Steps involved synthesis of KTNO, proton exchange to HTNO, exfoliation with TBAOH, electrophoresis deposition on substrates, annealing at various temperatures, characterization of structure and morphology, and measurement of electrical properties.
5:Data Analysis Methods:
Data were analyzed using XRD for crystal structure, SEM/AFM/TEM for microstructure, FTIR for organic defects, EDS for composition, and electrical measurements for dielectric and insulation properties with statistical techniques and software tools as per instrument specifications.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容-
X-ray diffractometer
Rigaku D/max-RC
Rigaku
Investigate crystal structures of bulk precursors, TNO nanosheets, and thin films
-
Scanning electron microscope
Hitachi S-4800
Hitachi
Investigate microstructures of specimens
-
Transmission electron microscope
JEOL JEM 2100 F
JEOL
Study crystal structures of TNO nanosheets and thin films
-
Precision LCR meter
Agilent 4285 A
Agilent
Measure capacitances and tan δ in frequency range 75.0 kHz to 1.0 MHz
-
Precision impedance analyzer
Agilent 4284 A
Agilent
Study stability of dielectric properties with respect to applied electric field and measure VCCs
-
Semiconductor parameter analyzer
Agilent 4155C
Agilent
Measure leakage current density at various temperatures
-
Atomic force microscope
Park Systems NX-10
Park Systems
Investigate microstructures and surface roughness of specimens
-
Energy-dispersive X-ray spectroscopy
EMAX
Horiba
Analyze chemical compositions of bulk precursors and thin films
-
Fourier transform infrared spectrometer
Varian 640-IR
Varian
Examine behavior of organic defects in colloidal suspensions
-
Ball mill
Mix powders for synthesis
-
Furnace
Calcination and sintering of ceramics
-
Electrophoresis setup
Deposit TNO thin films on substrates
-
DC sputtering system
Deposit Pt top electrodes
-
登录查看剩余11件设备及参数对照表
查看全部