研究目的
To grow and characterize Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms, investigating their structural, electronic, and magnetic properties, including the potential for topological insulator behavior.
研究成果
Ce(O,F)Sb(S,Se)2 single crystals were successfully grown with selective Se occupation in the in-plane site, forming SbSe planes. The Ce valence is trivalent, and the crystals exhibit insulating behavior with magnetic ordering around 6 K. However, no topological insulator state was observed, suggesting further research is needed to explore conductivity enhancements and topological properties.
研究不足
The convergence of R1 values in structural refinement was not optimal (14.41%), indicating potential inaccuracies. No evidence of topological insulator behavior was found despite structural expectations. The study is limited to specific compositions and may not generalize to other materials.
1：Experimental Design and Method Selection:
A high-temperature flux method using CsCl/KCl flux was employed for crystal growth, based on previous studies. X-ray diffraction, XAFS, electrical and magnetic measurements, and photoemission spectroscopy were used for characterization.
2：Sample Selection and Data Sources:
Single crystals were grown from raw materials including Ce, Sb2O3, SbF3, Sb, Sb2S3, Sb2Se3, S, Se, with nominal compositions Ce(O1-uFu)Sb(S2-xSex) (u=0–0.5, x=1.0–1.5).
3：5, x=0–5).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes SEM (JEOL JXA-8200), XRD (Rigaku MultiFlex and Mercury CCD diffractometer), XAFS (Aichi XAS beamline), PPMS DynaCool, SQUID magnetometer (MPMS), and PES (BL-2A MUSASHI). Materials include CsCl, KCl, boron nitride, silver paste, and various chemical compounds.
4：Experimental Procedures and Operational Workflow:
Mixtures were ground, sealed in quartz tubes, heated to 800–900°C, cooled slowly, washed to remove flux, and analyzed using EPMA, XRD, XAFS, resistivity, magnetization, and PES measurements.
5：Data Analysis Methods:
Structural analysis used SHELXT and SHELXL in WinGX. XAFS data were analyzed for valence state. Electrical and magnetic data were analyzed for insulating behavior and magnetic ordering. PES data were examined for topological states.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
