研究目的
To study the effect of hydrogen peroxide on the photoelectric properties of high-transmittance FTO films prepared by spray pyrolysis, aiming to improve film formation rate and quality for applications such as solar cells.
研究成果
Adding H2O2 up to 0.04 M improves FTO film growth rate, carrier concentration, mobility, transmittance, and reduces sheet resistance, with optimal performance at 0.04 M. Excessive H2O2 hinders fluorine incorporation and degrades electrical properties. The findings suggest a method to enhance FTO film quality for optoelectronic applications.
研究不足
The study is limited to specific H2O2 concentrations (0-0.08 M) and substrate temperature of 500 °C; higher concentrations or temperatures were not explored. The self-made spray pyrolysis equipment may have variability, and the effects on long-term stability or other substrates are not addressed.
1：Experimental Design and Method Selection:
The study uses spray pyrolysis to prepare FTO films, with a focus on varying H2O2 concentrations to investigate its impact on film properties. Theoretical models include XRD for structural analysis, SEM for morphology, UV-Vis for optical properties, and four-point probe for electrical measurements.
2：Sample Selection and Data Sources:
Glass substrates (30 × 25 × 1 mm) are used, cleaned ultrasonically with deionized water and ethanol. Precursor solutions are prepared with MBTC as tin source, NH4F as fluorine source, and H2O2 concentrations of 0, 0.01, 0.02, 0.04, and 0.08 M.
3：01, 02, 04, and 08 M.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a self-made spray pyrolysis unit, D/MaX-rB diffractometer for XRD, Hitachi S4300 SEM, UV-Vis spectrometer, and four-point probe. Materials include MBTC, HCl, methanol, NH4F, deionized water, H2O2 (30%), compressed air, and glass substrates.
4：Experimental Procedures and Operational Workflow:
Solutions A and B are prepared by magnetic stirring, mixed with H2O2, stirred for 6 h, aged for 24 h. Spray pyrolysis is performed at 500 °C substrate temperature, 3 cm nozzle-substrate distance, 3 min deposition time, using compressed air as carrier gas. Films are cooled naturally.
5：Data Analysis Methods:
XRD data analyzed for crystal structure and size using Scherrer formula, SEM for particle size distribution, UV-Vis for transmittance and band gap calculation, four-point probe for sheet resistance, and formulas for carrier concentration, mobility, mean free path, and quality factor.
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