研究目的
To characterize a 2.5 kV discrete SiC MOSFET both statically and dynamically, including under high temperature conditions, and compare its performance with a commercially available 1.7 kV SiC MOSFET.
研究成果
The 2.5 kV discrete SiC MOSFET exhibits comparable static and dynamic characteristics to the 1.7 kV commercial device at room temperature, with similar switching energy losses that remain stable up to 200°C. Its low on-resistance and capacitance enable faster switching speeds, making it suitable for high-voltage applications such as 2-level converters up to 1.6 kV DC-link voltages, potentially avoiding the need for 3-level topologies.
研究不足
The tests were performed above the official device temperature ratings (150°C for the 1.7 kV device and 175°C for the 2.5 kV device), which may not reflect long-term reliability. The comparison is limited to one commercial device (1.7 kV CREE MOSFET), and the study does not address potential variations in device performance over time or under different operating conditions.
1：Experimental Design and Method Selection:
The study involved static characterization using a curve tracer and dynamic characterization using a clamped inductive switching circuit for double pulse tests to measure switching energy losses.
2：Sample Selection and Data Sources:
The devices under test were a GE
3：5 kV SiC MOSFET (GE25N30L) and a CREE 7 kV SiC MOSFET (C2M0045170D), selected for comparison based on similar on-resistance and blocking voltage characteristics. List of Experimental Equipment and Materials:
Equipment included a Keysight B1505A curve tracer, a clamped inductive test circuit with components such as bulk capacitors (250 μF), decoupling capacitors (
4：5 μF), inductor (1 mH), diode (3 kV Schottky Barrier Diode), shunt resistor (26 m?), gate driver, and high-bandwidth passive probes. Materials included the SiC MOSFET devices. Experimental Procedures and Operational Workflow:
Static tests measured breakdown voltage, transfer characteristics, output characteristics, on-resistance, and capacitances at temperatures up to 200°C. Dynamic tests involved double pulse tests at
5：6 kV DC bias and currents from 10-60 A, with waveforms captured and switching losses calculated using MATLAB. Data Analysis Methods:
Switching losses were calculated by integrating the product of drain-source voltage and current waveforms, with post-processing in MATLAB to determine turn-on and turn-off energies.
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SiC MOSFET
C2M0045170D
CREE
Reference device for comparison in static and dynamic characterization.
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Curve Tracer
B1505A
Keysight Technologies
Used for static characterization of the devices, measuring parameters like breakdown voltage and on-resistance.
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SiC MOSFET
GE25N30L
GE
Device under test for static and dynamic characterization in power electronic applications.
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Schottky Barrier Diode
Used in the clamped inductive test circuit to withstand high voltages during dynamic characterization.
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Capacitor
Bulk and decoupling capacitors used in the test circuit for energy storage and filtering.
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Inductor
Used in the double pulse test circuit to provide inductive load for switching characterization.
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Shunt Resistor
Used to measure drain-source current by converting it to a voltage signal.
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Gate Driver
Used to control the switching of the MOSFET with specific voltage levels.
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Passive Probe
High-bandwidth probes used to measure drain-source voltage and gate-source voltage waveforms.
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