1：Experimental Design and Method Selection:

The study involved irradiating Pd films on 6H-SiC with swift heavy ions (Xe26+ at 167 MeV) at different fluences to observe phase changes, stress variations, and surface morphology. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for analysis.

2：Sample Selection and Data Sources:

Semi-insulating 6H-SiC single-crystal wafers were cut into 5 × 5 mm2 pieces, chemically cleaned, and Pd films of about 385 nm thickness were deposited by resistive evaporation.

3：List of Experimental Equipment and Materials:

Equipment included a diamond scriber for cutting, resistive evaporation system for deposition, Inficon deposition rate monitor, Xe26+ ion irradiation facility at JINR, Bruker-AXS D8 Advance diffractometer for XRD, Bruker D8 Discover diffractometer for stress measurements, Zeiss Ultra 55 SEM for morphology, and SRIM-2013 software for simulations. Materials included Pd, 6H-SiC wafers, methanol, HF, deionized water.

4：Experimental Procedures and Operational Workflow:

Samples were prepared by cleaning and depositing Pd, irradiated at room temperature with specified fluences, and analyzed using XRD for phase identification and stress, and SEM for surface examination. Stress measurements involved multiple azimuth and tilt angles.

5：Data Analysis Methods:

XRD data were analyzed using Scherrer equation for crystallite size and proprietary Leptos v6.02 software for stress-strain determination. SEM images were examined for morphological changes.