研究目的
To explore the optoelectronic responses of AgZr (AZ) and ITO/AgZr (IAZ) thin film metallic glasses (TFMGs) with different Ag and Zr compositions and processed by two different annealing methods, namely furnace annealing (FA) and laser annealing (LA), and to examine their bending fatigue properties.
研究成果
The study demonstrates that Ag66Zr34 IAZ films processed by laser annealing achieve superior optoelectronic properties (transmittance of 64.0% and sheet resistance of 17.8 Ω/□) and a 32.5-fold improvement in figure of merit compared to as-deposited films. Additionally, these films show better bending fatigue resistance than pure ITO films, making them promising for optoelectronic applications.
研究不足
The study is limited to specific compositions of Ag and Zr, and annealing parameters. The use of glass substrates may not fully represent flexible applications. The bending fatigue tests are conducted only on as-deposited films, not annealed ones.
1:Experimental Design and Method Selection:
The study uses magnetron sputtering for deposition and two annealing methods (furnace annealing and laser annealing) to treat the films. The rationale is to compare the effects of different annealing processes on optoelectronic and bending fatigue properties.
2:Sample Selection and Data Sources:
AZ and IAZ films with varying Ag and Zr compositions (e.g., Ag66Zr34, Ag50Zr50) are deposited on glass substrates. The glass substrates are OA-10 G type from Nippon Electric Glass Co.
3:List of Experimental Equipment and Materials:
Magnetron sputtering system (Kao Duen Co.), Ag, Zr, and ITO targets (purities 99.99% for Ag and Zr, ITO target with 90 wt% In2O3 and 10 wt% SnO), glass substrates, furnace for annealing, fiber laser (SPI-12, UK; 1064 nm wavelength), four-point probe (SR-H1000C), UV–vis-IR spectrophotometer (Lambda 35, PerkinElmer), X-ray diffractometer (XRD, Bruker D8), scanning electron microscopy (SEM, JEOL JSM 7600F), energy dispersive X-ray spectrometry (EDS), dual-focus ion beam system (FIB, SEIKO SMI 3050), transmission electron microscopy (TEM, JEOL 3010).
4:99% for Ag and Zr, ITO target with 90 wt% In2O3 and 10 wt% SnO), glass substrates, furnace for annealing, fiber laser (SPI-12, UK; 1064 nm wavelength), four-point probe (SR-H1000C), UV–vis-IR spectrophotometer (Lambda 35, PerkinElmer), X-ray diffractometer (XRD, Bruker D8), scanning electron microscopy (SEM, JEOL JSM 7600F), energy dispersive X-ray spectrometry (EDS), dual-focus ion beam system (FIB, SEIKO SMI 3050), transmission electron microscopy (TEM, JEOL 3010). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Films are deposited via magnetron sputtering. FA is performed at 100–400 °C with a heating rate of 5 °C/min and holding time of 1 h. LA is conducted with repetition rates of 100–400 kHz and irradiation powers of 42–545 mW, with laser scanning speed of 5 mm/s, spot size of 40 μm, and pulse duration of 30 ns. Sheet resistance and optical transmittance are measured. Microstructure is characterized using XRD, SEM, EDS, FIB, and TEM. Bending fatigue tests are performed with a bend radius of 7 mm at 1 cycle/s.
5:Data Analysis Methods:
Sheet resistance and transmittance data are used to calculate the figure of merit (?TC = T^10 / Rs). Statistical analysis is implied through comparison of values across samples.
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UV–vis-IR Spectrophotometer
Lambda 35
PerkinElmer
Measurement of optical transmittance over 200–1100 nm
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X-ray Diffractometer
Bruker D8
Bruker
Characterization of film structures using Cu-Kα radiation
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Scanning Electron Microscopy
JEOL JSM 7600F
JEOL
Examination of film morphologies and compositions
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Transmission Electron Microscopy
JEOL 3010
JEOL
Microstructure observations and phase identification
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Magnetron Sputtering System
Kao Duen Co.
Deposition of AZ and IAZ films on glass substrates
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Four-Point Probe
SR-H1000C
Measurement of sheet resistance
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Dual-Focus Ion Beam System
SEIKO SMI 3050
SEIKO
Preparation of cross-section TEM foils
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Fiber Laser
SPI-12
Laser annealing of films
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