研究目的
To study the influence of thermostimulated surface plasmon-phonon polariton oscillations on THz radiation reflection, absorption, and emission in highly conductive n-GaAs plates, and to determine the frequencies of these oscillations and their effects on thermal emission and absorption.
研究成果
The heated GaAs/air interface emits THz radiation at SPP frequencies, with thermal heating enhancing absorption and reducing reflectivity. The frequencies of SPP oscillations were experimentally determined, and the GaAs plate can serve as a high-power continuous wave radiation source in specific THz ranges. Future studies could explore other materials or broader frequency ranges.
研究不足
The study is limited to specific doping concentrations and thickness of GaAs samples. The experimental setup may not capture all aspects of SPP behavior, and the results are specific to the THz frequency range and GaAs material. Potential optimizations could include varying more parameters or using different materials.
1：Experimental Design and Method Selection:
The method of thermally stimulated emission of vibrational states in single crystals and interfaces was used. The study involved heating GaAs plates and measuring reflection and emission spectra to investigate SPP oscillations.
2：Sample Selection and Data Sources:
High conductivity GaAs polished plates with electron densities n = 7·1017 cm–3 and 4·1018 cm–3, and thickness of 350 μm were used. Samples were heated by electric current.
3：List of Experimental Equipment and Materials:
IR spectrometer-transformer Nicolet 8700 (Thermo Scientific) for measuring reflection and emission spectra; GaAs samples; electric current source for heating.
4：Experimental Procedures and Operational Workflow:
GaAs plates were heated to temperatures up to 350 °C using electric current. Reflection and emission spectra were measured at different temperatures, with detector temperature maintained at 20 °C. Spectra were analyzed in the THz range (100–600 cm–1).
5：1).
Data Analysis Methods:
5. Data Analysis Methods: Reflection coefficient R(T) and emission intensity Iem(T) were measured. Data were analyzed to determine SPP frequencies and their temperature dependence, using equations related to dielectric function and Kirchhoff's law.
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