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Conformal Filling of TiO <sub/>2</sub> Nanotubes with Dense M <sub/>x</sub> S <sub/>y</sub> Films for 3D Heterojunctions: The Anion Effect

DOI:10.1002/celc.201801380 期刊:ChemElectroChem 出版年份:2019 更新时间:2025-09-19 17:15:36
摘要: It is appealing to fill up TiO2 nanotube arrays with other semiconductors to form three-dimensional heterojunctions of interdigitated feature. This benefits from the large interfacial area for rapid charge separation and the ordered vertical channels for oriented charge transport. However, it remains a great challenge to fill the nanotubes with dense films and more importantly in a conformal manner. In this study, the TiO2 nanotubes are conformally filled with ZnS by successive ionic layer adsorption and reaction. The ZnS exists in the form of either discrete nanoparticles or dense films when using nitrate or acetate precursor solutions, respectively. This is attributed to the hydrolysis process of the acetates in aqueous solutions, which releases extra hydroxyl ions beneficial to film formation. The CuS/TiO2 heterojunctions, resulted from ZnS dense films, show better rectifying behaviors in view of the interdigitated structure. Such a conformal filling process with dense films can also be used to form other MxSy/TiO2 bulk heterojunctions toward applications in optoelectronics, photovoltaics, photocatalysis, and so on.
作者: Xiaoli Zhao,Yu Jin,Chengjie Xiang,Jian Jin,Mei Ding,Sujuan Wu,Chuankun Jia,Lidong Sun
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To achieve conformal filling of TiO2 nanotubes with dense ZnS films using a solution-based process and investigate the effect of anion precursors on the formation of dense films versus discrete nanoparticles, leading to improved 3D heterojunctions for applications in optoelectronics and photovoltaics.

Conformal filling of TiO2 nanotubes with dense ZnS films is achieved using zinc acetate precursor, attributed to hydrolysis releasing hydroxyl ions that facilitate film formation. This results in superior CuS/TiO2 heterojunctions with better rectifying behavior (ideality factor of 3.4, reverse saturation current density of 5.6e-6 A/cm2, rectification ratio of 21 at ±1 V) due to reduced hole scattering in dense films. The method is promising for optoelectronic applications and can be extended to other sulfides via ion exchange.

The study relies on specific precursor solutions and SILAR method, which may not be universally applicable to all materials. The process requires multiple steps and careful control of parameters. Atomic layer deposition, though mentioned, is not used due to its complexity, indicating a trade-off between simplicity and film quality. The rectifying performance, while improved, still has an ideality factor higher than ideal (3.4 vs. 1-2), suggesting room for optimization in charge transport and recombination reduction.

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