研究目的
To fabricate a-STO TFTs matched with Mo electrodes to obtain good contact characteristics and investigate the effects of pre-annealing on the formation of a self-formed metal-oxide interlayer for improved electrical performance.
研究成果
The pre-annealing at 300°C induces the formation of an ~8nm MoOx interlayer between Mo electrodes and a-STO film, leading to ohmic contact with reduced contact resistance. This interlayer blocks Mo diffusion and provides a stepwise transport barrier, improving electron injection and device performance. The findings suggest a promising approach for enhancing contact quality in oxide TFTs.
研究不足
The study is limited to specific annealing temperatures (250°C and 300°C) and Mo electrodes; other metals or conditions were not explored. The interlayer formation mechanism may vary with different materials or processing parameters. No passivation layer was used, which could affect device stability.
1：Experimental Design and Method Selection:
The study involved fabricating inverted staggered type a-STO TFTs with Mo source/drain electrodes. Pre-annealing at 250°C and 300°C in air ambient was used to induce interlayer formation. Electrical characterization was performed using transmission line method (TLM) to extract contact and channel resistances. Structural and compositional analyses were conducted using X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy (HR-TEM).
2：Sample Selection and Data Sources:
a-STO films were deposited from a STO target (SiO2:SnO2=5:95 wt%) on substrates. Samples included as-deposited, 250°C annealed, and 300°C annealed conditions.
3：List of Experimental Equipment and Materials:
Equipment included RF magnetron sputtering system (Kurt J. Lesker), DC magnetron sputtering for gate metal deposition, XRR (Empyrean, PANalytical), semiconductor parameter analyzer (Agilent 4155C), XPS (Thermo ESCALAB 250 Xi), and HR-TEM. Materials included Al-Nd alloy, Mo metal, STO target, and anodization electrolyte.
4：Experimental Procedures and Operational Workflow:
Steps involved depositing gate metal, anodizing to form gate insulator, depositing a-STO film, pre-annealing, depositing Mo S/D electrodes via shadow mask, and performing electrical and structural measurements.
5：Data Analysis Methods:
Data were analyzed using X'Pert Reflectivity software for XRR, Gaussian fitting for XPS peaks, and TLM equations for resistance extraction.
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