研究目的
To suppress leakage current and achieve high-quality periodic poling in MgO-doped lithium niobate (Mg:LN) wafers using liquid electrodes for applications in quantum communication devices.
研究成果
High-quality periodic poling of 76.2-mm-diameter Mg:LN wafers was achieved using a 700-nm SiO2 dielectric layer to suppress leakage current, with a 90% finished product rate. The domains were uniform with a duty cycle of 45±5%, and SHG conversion efficiency of 2.35%/W confirmed the quality, supporting mass production for quantum communication devices.
研究不足
The study is limited to specific Mg:LN wafer dimensions and SiO2 layer thicknesses; issues like dielectric breakdown and layer delamination at certain thicknesses were observed, and the method may not generalize to other materials or conditions without optimization.
1:Experimental Design and Method Selection:
The study employed the electric-field poling method with liquid electrodes to fabricate periodically poled Mg:LN (PPMgLN). A SiO2 dielectric layer was deposited on the -z surface to suppress leakage current, and the multipulse application method was used to control resistance reduction.
2:Sample Selection and Data Sources:
5 mol.% Mg:LN wafers with a diameter of 76.2 mm and thickness of 0.5 mm, grown by the Czochralski method and polarization processed, were used as the matrix.
3:2 mm and thickness of 5 mm, grown by the Czochralski method and polarization processed, were used as the matrix. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a plasma enhanced chemical vapor deposition (PECVD) system for SiO2 deposition, photolithography setup with S1828 photoresist, arbitrary waveform generator, high voltage amplifier, atomic force microscope (AFM), prism coupling meter, thin-film analyzer, field-emission scanning electron microscope (FESEM), electron probe microanalyzer (EPMA), optical microscope, piezoelectric force microscope (PFM), and a TSL-510 laser with erbium-doped fiber amplifier for SHG characterization. Materials include Mg:LN wafers, SiO2 layer, photoresist, hydrofluoric acid for etching, and saturated aqueous solution of lithium chloride for liquid electrodes.
4:Experimental Procedures and Operational Workflow:
The -z surface was coated with SiO2 of varying thicknesses (0, 400, 700, 900 nm) via PECVD. The +z surface was patterned with photoresist gratings (20 μm period) using photolithography and hard-baking. Poling was done with liquid electrodes, applying high voltage pulses (2 ms width, 10 ms repetition rate) using an amplifier. After poling, samples were etched in HF to reveal domains and characterized with microscopy and SHG tests.
5:Data Analysis Methods:
AFM and SEM for morphology, prism coupling for refractive index, thin-film analyzer for thickness uniformity, EPMA for elemental analysis, optical microscopy and PFM for domain observation, and SHG efficiency calculation for performance evaluation.
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Atomic Force Microscope
Dimension Icon
Bruker Corporation
Characterization of surface morphology and particle size uniformity of the SiO2 layer
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Field-emission Scanning Electron Microscope
S-4800
HITACHI Corporation
Characterization of cross-sectional image of the SiO2 layer
暂无现货
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Electron Probe Microanalyzer
1720H
Shimadzu Corporation
Analysis of distribution of Mg and Nb elements
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Optical Microscope
BX51RF
Olympus Corporation
Observation of periodic domain-inverted structures after etching
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Prism Coupling Meter
2010/M
Metricon Corporation
Measurement of refractive index of the SiO2 layer
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Thin-film Analyzer
F20
Filmetrics Corporation
Measurement of thickness of the SiO2 layer
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Piezoelectric Force Microscope
Visualization of domain-inverted structures without etching
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Single-frequency Tunable Semiconductor Laser
TSL-510
Pump source for second harmonic generation characterization
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Erbium-doped Fibre Amplifier
Amplification of the laser source
暂无现货
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Photoresist
S1828
Microposit
Defining periodic electrode patterns on the +z surface
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High Voltage Amplifier
Amplifying low voltage for poling
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Arbitrary Waveform Generator
Providing low voltage for poling
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