研究目的
To study the effects of the built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures, including calculations of binding energies and transition energies as functions of quantum well width, donor position, indium concentration, and external magnetic field.
研究成果
The built-in electric field significantly affects donor binding energies and transition energies in InGaN/ZnSnN2 quantum wells, leading to asymmetric behaviors and enhancements compared to bulk values. The maximum transition energy reaches about 30 meV (7.3 THz), and similar effects are observed in ZnSnN2/InGaN structures with different band alignments. The findings suggest potential applications in THz devices, but further experimental work is needed for validation.
研究不足
The study is computational and theoretical, relying on approximations such as effective mass and envelope function approximations. It does not involve experimental validation. Material properties are based on literature, which may have uncertainties (e.g., conflicting reports on conduction band offsets). The range of parameters (e.g., indium concentration from 0.2 to 0.5) is limited, and real-world imperfections are not considered.
