研究目的
To develop a wet chemical method for mass production of layered air-stable black phosphorus (BP) through thinning and passivation, addressing the challenges in its fabrication for electronic and optoelectronic applications.
研究成果
The all-solution based chemical modification method enables mass production of layered air-stable BP with enhanced electronic properties and environmental stability, showing promise for industrial applications in optoelectronics and electronics.
研究不足
The method requires further research to fully understand the modification mechanisms and optimize the process. The selectivity and compatibility with other materials may need improvement for broader applications.
1:Experimental Design and Method Selection:
The study employs a chemical modification method using TEMPO and [Ph3C]BF4 in organic solvents for thinning and passivation of BP. DFT calculations are used to model bonding mechanisms.
2:Sample Selection and Data Sources:
BP flakes are obtained by mechanical exfoliation from bulk BP (Smart Elements, USA) and transferred onto SiO2/Si substrates.
3:List of Experimental Equipment and Materials:
Equipment includes AFM (Bruker Dimension Icon), Raman microscope (Renishaw InVia), XPS (Thermo Scientific ESCALAB 250 Xi), HR-TEM (FEI Tecnai G2 F20), ESR spectrometer (Bruker EMXplus), and semiconductor parameter analyzer (Agilent B1500A). Materials include TEMPO, [Ph3C]BF4, dichloromethane, acetone, water, and solvents like NMP and IPA.
4:Experimental Procedures and Operational Workflow:
BP flakes are immersed in modification solutions with varying concentrations of TEMPO and [Ph3C]BF4 in different solvents (e.g., dichloromethane for thinning, water/acetone mixture for passivation) for specified durations, followed by washing and drying. FET devices are fabricated using electron-beam lithography and metal deposition. Photocurrent measurements are performed using SPCM with lasers.
5:Data Analysis Methods:
Data analysis involves AFM for thickness measurement, Raman spectroscopy for structural integrity, XPS for elemental analysis, and electrical characterization for FET performance.
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Atomic Force Microscope
Dimension Icon
Bruker
Characterization of BP flakes for thickness and surface roughness measurements.
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XPS Spectrometer
ESCALAB 250 Xi
Thermo Scientific
Performing XPS measurements to analyze chemical states and elemental composition of BP samples.
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Transmission Electron Microscope
Tecnai G2 F20
FEI
Taking HR-TEM images to confirm lattice structure integrity of thinned BP.
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ESR Spectrometer
EMXplus
Bruker
Testing ESR spectra to detect free radicals in the modification solution.
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Semiconductor Parameter Analyzer
B1500A
Agilent
Performing electrical measurements of FET devices under ambient conditions.
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Raman Microscope
InVia
Renishaw
Obtaining Raman spectra to assess structural integrity and oxidation levels of BP.
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Bulk Black Phosphorus
Smart Elements
Source material for exfoliation to obtain BP flakes.
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