研究目的
To investigate the effect of Fe doping on the structure, magnetic, dielectric, and optical properties of ZnO system, focusing on controlling n-type behavior, high dielectric constant, and oxygen vacancies for potential high-frequency device applications.
研究成果
Fe-doped ZnO ceramics exhibit controlled structural, dielectric, magnetic, and optical properties, with potential for high-frequency device applications due to reduced defects and ohmic conductivity. The shift from diamagnetic to paramagnetic behavior and band gap narrowing are attributed to Fe doping and secondary phase formation.
研究不足
The study is limited to bulk ceramics synthesized by solid state reaction; thin films or other synthesis methods were not explored. The presence of minor secondary phases at higher Fe concentrations may affect properties. Room temperature measurements only; temperature-dependent behavior was not investigated.
1:Experimental Design and Method Selection:
Solid state reaction (SSR) technique was used for synthesis, with characterization methods including XRD, dielectric measurements, VSM for magnetic properties, FTIR, and UV-Vis spectroscopy for optical properties. Theoretical models like Maxwell-Wagner-Sillars equations and Rietveld refinement were employed.
2:Sample Selection and Data Sources:
Samples of Zn1-xFexO with x from 0 to 0.07 mol were prepared using analytical grade ZnO and FeO powders from Across.
3:07 mol were prepared using analytical grade ZnO and FeO powders from Across.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes Shimadzu XRD model 6000, Agilent LCR meter 4890A, VSM model EV-9 ADE, Perkin-Elmer Lambda 1050 UV/VIS/NIR spectrometer, Perkin-Elmer FTIR spectrophotometer. Materials include ZnO and FeO powders, yttria-stabilized zirconia balls, acetone, oleic acid, PVA binder.
4:Experimental Procedures and Operational Workflow:
Powders were ball-milled for 24h, dried at 80°C, pressed into pellets, cold isostatically pressed at 300 MPa, and sintered at 1150°C for 2h with controlled heating and cooling rates. Characterization was performed at room temperature.
5:Data Analysis Methods:
Rietveld refinement using GSAS-II software for XRD data, fitting with MWS equations for dielectric data, Tauc plot for band gap calculation.
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