研究目的
Investigating the influence of pulse frequency on the structural, optical, and electrical properties of electrodeposited InSb films.
研究成果
Pulse frequency significantly tunes InSb film properties: high-frequency pulses yield stoichiometric, polycrystalline, conductive films, while low-frequency pulses produce Sb-rich, ultra-smooth, insulating films. Crystal size reduction increases resistivity, and films exhibit direct band gaps and p-type conductivity. The 10 ms pulse films show optimal optoelectronic potential due to smooth surfaces and high photovoltage.
研究不足
The study notes that the presence of oxide phases might not be fully captured by XRD due to measurement geometry favoring volume composition over surface. Hydrogen evolution during deposition could influence surface properties, and explicit designation of which metal dissolves faster during off-pulses requires further investigation due to polycrystalline sample complexity.
1:Experimental Design and Method Selection:
The study employed potentiostatic pulse electrodeposition to synthesize InSb films, focusing on varying pulse duration times (1 ms, 10 ms, 100 ms) while keeping duty cycle and total process time constant. The rationale was to explore how pulse frequency affects film properties through competitive reactions like ion reduction and hydrogen evolution.
2:Sample Selection and Data Sources:
InSb films were electrodeposited on copper foil substrates pre-treated with electropolishing and etching, followed by sputtering a 30 nm Au layer. Electrolyte composition was fixed with citrate bath containing In3? and Sb3? ions.
3:List of Experimental Equipment and Materials:
Equipment included a BioLogic SP300 potentiostat for electrodeposition, FEI VERSA 3D SEM for morphology, Panalytical Empyrean diffractometer for XRD, DektakXT Bruker profilometer and Agilent 5500 ILM AFM for thickness/roughness, PHI VersaProbeII XPS for surface composition, LabRam HR Raman microscope for crystallinity, Bode 100 analyzer for electrical measurements, Nicolet 8700 FT-IR Spectrometer for optical properties, and Kelvin probe-based SPV spectrometer for photovoltage. Materials included InCl?, SbCl?, citric acid, sodium citrate from Alfa Aesar and Sigma Aldrich.
4:Experimental Procedures and Operational Workflow:
Electrodeposition was performed in a three-electrode cell at room temperature with fixed E_on and E_off potentials. Post-deposition, films were characterized using SEM, XRD, AFM, XPS, Raman, FTIR, electrical resistance, and SPV measurements under controlled conditions (e.g., temperature 21°C).
5:Data Analysis Methods:
Data analysis involved calculating Faraday efficiency, coherent domain size from XRD using LaB? standard, roughness via Gwyddion software, band gap from Tauc plots, resistivity from two-point measurements, and photovoltage parameters using capacitor charging equation fits.
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scanning electron microscope
VERSA 3D
FEI
Used for high-resolution morphological characterization of InSb films.
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diffractometer
Empyrean
Panalytical
Used for XRD analysis to examine crystallinity and phase composition.
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profilometer
DektakXT
Bruker
Used for measuring film thicknesses.
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atomic force microscope
5500 ILM
Agilent
Used for roughness measurements.
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FT-IR spectrometer
Nicolet 8700
Thermo Scientific
Used for DRIFTS spectra collection.
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potentiostat
SP300
BioLogic
Used for potentiostatic pulse electrodeposition of InSb films.
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X-ray photoelectron spectroscopy system
VersaProbeII
PHI
Used for surface composition analysis.
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Raman confocal microscope
LabRam HR
JOBIN YVON
Used for Raman study to confirm crystallinity.
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analyzer
Bode 100
OMICRON LAB
Used for two-point electrical measurements.
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surface photovoltage spectrometer
Instytut Fotonowy and Besocke Delta Phi
Used for SPV measurements.
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Kelvin probe
KP1
KP Technology
Used for work function and Fermi level measurements.
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