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High-Performance Photoresistors Based on Perovskite Thin Film with a High PbI2 Doping Level

DOI:10.3390/nano9040505 期刊:Nanomaterials 出版年份:2019 更新时间:2025-11-14 15:28:36
摘要: We prepared high-performance photoresistors based on CH3NH3PbI3 ?lms with a high PbI2 doping level. The role of PbI2 in CH3NH3PbI3 perovskite thin ?lm was systematically investigated using scanning electron microscopy, X-ray diffraction, time-resolved photoluminescence spectroscopy, and photoconductive atomic force microscope. Laterally-structured photodetectors have been fabricated based on CH3NH3PbI3 perovskite thin ?lms deposited using precursor solution with various CH3NH3I:PbI2 ratios. Remarkably, the introduction of a suitable amount of PbI2 can signi?cantly improve the performance and stability of perovskite-based photoresistors, optoelectronic devices with ultrahigh photo-sensitivity, high current on/off ratio, fast photo response speed, and retarded decay. Speci?cally, a highest responsivity of 7.8 A/W and a speci?c detectivity of 2.1 × 1013 Jones with a rise time of 0.86 ms and a decay time of 1.5 ms have been achieved. In addition, the local dependence of photocurrent generation in perovskite thin ?lms was revealed by photoconductive atomic force microscopy, which provides direct evidence that the presence of PbI2 can effectively passivate the grain boundaries of CH3NH3PbI3 and assist the photocurrent transport more effectively.
作者: Jieni Li,Henan Li,Dong Ding,Zibo Li,Fuming Chen,Ye Wang,Shiwei Liu,Huizhen Yao,Lai Liu,Yumeng Shi
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To investigate the role of PbI2 in CH3NH3PbI3 perovskite thin films and develop high-performance photoresistors with improved performance and stability through high PbI2 doping levels.

The incorporation of a high PbI2 doping level (MAI:PbI2 ratio of 0.5:1) in CH3NH3PbI3 perovskite thin films significantly enhances photodetector performance, achieving high responsivity (7.8 A/W), specific detectivity (2.1 × 1013 Jones), fast response times (0.86 ms rise, 1.5 ms decay), and improved stability. PbI2 effectively passivates grain boundaries, reducing defects and enhancing charge transport, as confirmed by PC-AFM and PL studies. This approach demonstrates the potential of non-stoichiometric perovskites for high-performance optoelectronic applications.

The study is limited to CH3NH3PbI3 perovskite with PbI2 doping and lateral device structures; stability tests showed ~15% decay after one month, and the performance may vary with other perovskite compositions or device architectures. The experiments were conducted in controlled environments (glove box), which may not fully represent real-world conditions.

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