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Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition
摘要： In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.
关键词： silicon nitride,silicon oxynitride,oxygen contamination,optical properties,plasma enhanced atomic layer deposition
更新于2025-09-04 15:30:14
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Strategic Selection of the Oxygen Source for Low Temperature-Atomic Layer Deposition of Al <sub/>2</sub> O <sub/>3</sub> Thin Film
摘要： The influence of two oxygen source types, H2O and O3, on residual C-related impurities in atomic-layer-deposited (ALD) Al2O3 film is systematically examined. ALD Al2O3 film grown using H2O contains negligible C-related impurities irrespective of growth temperature. However, the C-related impurity in film grown using O3 exhibits strong dependence on growth temperature; only Al carbonate (Al-CO3) is present in film grown at 300 °C, but C-related impurities with lower oxidation states, such as Al-COOH and Al-CHO, appear as the temperature decreases to 150 °C. This suggests that the reactivity of O3 and H2O in the ALD process has a different temperature dependence; from a residual impurity perspective, compared to O3, H2O is a beneficial oxygen source for low temperature processes. Electrical properties, such as charge trapping and gate leakage current, are also examined. For a growth temperature of 300 °C, the film grown using O3 is slightly superior to the film grown using H2O due to its high film density. However, the film grown using H2O demonstrates better electrical characteristics at low growth temperature, 150 °C.
关键词： oxygen source,atomic layer deposition,low temperature process,ozone,water
更新于2025-09-04 15:30:14
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ALD of Space-Efficient SnO2 Underlayers for BiVO4 Host-Guest Architectures for Photoassisted Water Splitting
摘要： Bismuth vanadate (BiVO4) is promising for solar-assisted water splitting. The performance of BiVO4 is limited by charge separation for >70 nm films or by light harvesting for <700 nm films. To resolve this mismatch, host-guest architectures use thin film coatings on 3D scaffolds. Recombination, however, is exacerbated at the extended host-guest interface. Underlayers are used to limit this recombination with a host-underlayer-guest series. Such underlayers consume precious pore volume where typical SnO2 underlayers are optimized with 65-80 nm. Here we examine conformal and ultrathin SnO2 underlayers with low defect density produced by atomic layer deposition (ALD). This shifts the optimized thickness to just 8 nm with significantly improved space-efficiency. The materials chemistry thus determines the dimension optimization. Lastly, we demonstrate host-guest architectures with an applied bias photon-to-charge efficiency of 0.71%, a new record for a photoanode absorber prepared by ALD.
关键词： host-guest architectures,solar-assisted water splitting,atomic layer deposition,SnO2 underlayers,Bismuth vanadate
更新于2025-09-04 15:30:14
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A revisit to atomic layer deposition of zinc oxide using diethylzinc and water as precursors
摘要： Nanophase zinc oxide (ZnO) has been widely studied as an important multi-functional material in many applications. Atomic layer deposition (ALD) is a unique thin-film synthesis technique, featuring its extreme uniformity, unrivaled conformal coverage, low deposition temperature, and precise controllability. Using diethylzinc (DEZ) and water as precursors, ALD has been reported previously for growing nanophase ZnO thin films. However, the growth characteristics and the resultant ZnO crystallinity have not been well characterized and understood. To this end, we revisited the ALD process of ZnO using DEZ and water. Through employing a suite of advanced characterization techniques, we systematically addressed the growth characteristics, morphological changes, and the crystallinity evolution of ZnO along with growth temperature in the range of 30–250 °C. The growth characteristics of the ALD ZnO films were investigated using in situ quartz crystal microbalance (QCM), scanning electron microscopy, atomic force microscopy, and synchrotron-based X-ray reflectivity. The crystallinity of the ALD ZnO films was determined using synchrotron-based X-ray diffraction and high-resolution transmission electron microscopy. In addition, through further analyzing QCM data, we proposed the adsorption-limited surface reaction for ALD ZnO growth with the temperature-dependent number of –OH surface group reacting with one DEZ molecule. Thus, this study contributes to offer new and deep insights on the fundamental ALD process of ZnO.
关键词： Atomic layer deposition,Water,Diethylzinc,Crystallinity,Zinc oxide,Growth characteristics
更新于2025-09-04 15:30:14
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Fabrication and tribological characterization of deformation-resistant nano-textured surfaces produced by two-photon lithography and atomic layer deposition
摘要： In this study, we demonstrated a novel strategy for fabricating deformation-resistant nano-textured surfaces. Ordered arrays of IP-DIP photoresist nanodots of various diameters were first fabricated using two-photon lithography. IP-DIP/Al2O3 core-shell nanostructures (CSNs) were then formed by conformally coating the nanodots with Al2O3 of different thicknesses via atomic layer deposition (ALD). The CSNs showed 85% lower coefficients of friction than the bare IP-DIP nanodots and exhibited minimal nanostructure deformation at contact pressures greater than 20 GPa. The IP-DIP/Al2O3 CSNs also have lower adhesion forces than the bare IP-DIP nanodots. The excellent deformation resistance and superior tribological properties of these CSNs demonstrate that the combination of two-photon lithography and ALD is a very promising solution to tribological issues in miniaturized systems.
关键词： Surface Texturing,Atomic Layer Deposition.,Two-Photon Lithography,Core-Shell Nanostructures
更新于2025-09-04 15:30:14
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Effect of Deposition Method on Valence Band Offsets of SiO <sub/>2</sub> and Al <sub/>2</sub> O <sub/>3</sub> on (Al <sub/>0.14</sub> Ga <sub/>0.86</sub> ) <sub/>2</sub> O <sub/>3</sub>
摘要： There are often variations in reported valence band offsets for dielectrics on semiconductors and some of the reasons documented include metal or carbon contamination, interfacial disorder, variations in dielectric composition, thermal conditions, strain, and surface termination effects. In this paper we show that there are differences of up to 1 eV in band alignments for the common gate dielectrics SiO2 and Al2O3 on single crystal (Al0.14Ga0.86)2O3, depending on whether they are deposited by sputtering or Atomic Layer Deposition. In the case of Al2O3, this changed the band alignment from nested (type I) to staggered gap (type II). The valence band offset at each heterointerface was measured using X-Ray Photoelectron Spectroscopy and was determined to be ?0.85 ± 0.15 eV for sputtered Al2O3 and 0.23 ± 0.04 eV for ALD Al2O3 on β-(Al0.14Ga0.86)2O3, while for SiO2 it was 0.6 ± 0.10 eV for sputtered and 1.6 ± 0.25 eV for ALD. These results are consistent with recent results showing that the surface of Ga2O3 and related alloys are susceptible to severe changes during exposure to energetic ion environments.
关键词： Al2O3,(Al0.14Ga0.86)2O3,SiO2,valence band offsets,Atomic Layer Deposition,X-Ray Photoelectron Spectroscopy,sputtering
更新于2025-09-04 15:30:14