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AlGaN Solar-Blind Avalanche Photodiodes with p-Type Hexagonal Boron Nitride
摘要： To improve the performances of AlGaN solar-blind avalanche photodiodes (APD), we propose a separate absorption and multiplication AlGaN APD with a p-hBN layer. The simulated results show that the p-hBN/AlGaN APD significantly decreases the breakdown voltage almost by 23% in comparison with the conventional AlGaN APD due to the use of p-hBN which has a wider bandgap, a higher p-type doping efficiency, and a smaller spontaneous polarization. Moreover, the designed APD keeps an intrinsic solar-blind characteristic even at large reverse bias because the h-BN is completely transparent in the long wavelength direction outside the solar-blind region. The result also confirms that the p-hBN/AlGaN APD has the lower Flicker and impact ionization noise at low and medium frequency under breakdown voltage.
关键词： h-BN,solar-blind,avalanche photodiodes,AlGaN
更新于2025-09-23 15:21:21
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High-speed III-V based avalanche photodiodes for optical communicationsa??the forefront and expanding applications
摘要： Avalanche photodiodes (APDs), i.e., semiconductor devices, which convert and amplify optical signals into electrical signals, are used for optical communications and for imaging and medical applications. The major requirements for APDs in optical communications are high-speed operation for high data rates and high-sensitivity operation for extending the transmission reach. This paper overviews the achievements of high-speed APDs for 100-Gbit/s optical communications, focusing on III-V material systems, which are advantageous in terms of band engineering. The outlook for APDs in future optical communications is also described.
关键词： high-speed operation,high-sensitivity operation,III-V material systems,optical communications,Avalanche photodiodes
更新于2025-09-23 15:19:57
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A Data-Driven Home Energy Scheduling Strategy Under the Uncertainty in Photovoltaic Generations
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： Avalanche photodiodes,ion implantation,infrared detectors
更新于2025-09-23 15:19:57
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Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes
摘要： We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
关键词： 4H-SiC,single photon counting,passive quenching,Geiger mode,avalanche photodiodes,breakdown voltage
更新于2025-09-19 17:15:36
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes
摘要： Semiconductor enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times. The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of research aimed at investigation of the impact ionization mechanism in HgCdTe photodiodes operating at 230 K and in the medium-wave infrared range. Numerical analyses were used for the study.
关键词： avalanche photodiodes
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - High Average Power Picosecond Thulium-doped All-fiber Amplifier
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： ion implantation,infrared detectors,Avalanche photodiodes
更新于2025-09-19 17:13:59
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[IEEE IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - Yokohama, Japan (2019.7.28-2019.8.2)] IGARSS 2019 - 2019 IEEE International Geoscience and Remote Sensing Symposium - NOAA-20 Visible Infrared Imaging Radiometer Suite (VIIRS) on-Orbit Band-To-Band Registration Estimation for Reflective Solar Band (RSB) Using Scheduled Lunar Collections
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： infrared detectors,ion implantation,Avalanche photodiodes
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain
摘要： A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.
关键词： Avalanche photodiodes (APDs),Optical communication,Modeling
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode
摘要： GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of interlayers on the multiplication process was the AlN numerically simulated and analyzed. The results predict that the multiplication process contains three different stages with the increase of the reverse voltage. The experimental results agree with the numerically simulation very well and a high gain of 6×104 at constant voltage mode was obtained.
关键词： constant voltage mode,Avalanche photodiodes,AlN interlayers,high gain
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain
摘要： A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.
关键词： Avalanche photodiodes (APDs),Optical communication,Modeling
更新于2025-09-12 10:27:22