研究目的
To demonstrate a compact circuit model for Si-Ge avalanche photodiodes that accurately captures electrical and optical dynamics over a wide range of gain.
研究成果
The developed compact circuit model for Si-Ge APDs accurately captures electrical and optical dynamics over a wide range of gain, enabling efficient transimpedance amplifier (TIA) design. Excellent matching between simulated and measured 50 Gb/s eye diagrams demonstrates the model's validity and potential for co-design of optical devices and transceiver circuitry.
研究不足
The model's accuracy is dependent on the precise extraction of parameters from small signal electrical output impedances and device impulse responses. The study focuses on Si-Ge APDs, and the applicability to other materials or structures may require further validation.
1：Experimental Design and Method Selection:
The study involves the development of a compact circuit model for Si-Ge avalanche photodiodes (APDs) that includes carrier transit time, avalanche buildup time, and electrical parasitics. The model is validated over a wide range of gain.
2：Sample Selection and Data Sources:
The model is applied to a Si-Ge based waveguide APD with specific dimensions and doping concentrations.
3：List of Experimental Equipment and Materials:
A 65 GSa/s arbitrary waveform generator (AWG), a 25 GHz Fujitsu optical modulator, a Santec tunable laser operating at 1550 nm, an erbium-doped fiber amplifier (EDFA), a tunable optical filter, and a Keysight oscilloscope with a 63 GHz electrical module were used.
4：Experimental Procedures and Operational Workflow:
The model parameters were extracted by curve fitting small signal electrical output impedances and device impulse responses. The model was then verified by comparing simulated and measured 50 Gb/s PAM4 eye diagrams.
5：Data Analysis Methods:
The analysis involved fitting measured data to the model to extract parameters and validate the model's accuracy.
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