研究目的
To report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation, achieving high gain without significant tunneling current and low surface leakage current.
研究成果
Planar InAs APDs fabricated using Be ion implantation showed low surface leakage and displayed a diffusion dominated dark current down to a temperature of 200 K. A low background doping of 2 × 1014 cm?3 and a depletion width of 8 μm were achieved, enabling a gain of 330 at ?26 V at 200 K without incurring a significant tunnelling current. The graded p-type doping prevented edge breakdown within the APDs.
研究不足
Surface leakage was still significant, particularly at low temperatures or in small devices. The source of the background doping in the planar APDs was not determined.
1：Experimental Design and Method Selection:
Fabrication of InAs planar APDs using Be ion implantation.
2：Sample Selection and Data Sources:
InAs was grown using MOVPE with a susceptor temperature of 590 °C.
3：List of Experimental Equipment and Materials:
Metalorganic vapour phase epitaxy (MOVPE), Be ion implantation, SiO2, photoresist, SiN bondpads, single layer anti-reflective (AR) coating, SU-8, Ti/Au contacts.
4：Experimental Procedures and Operational Workflow:
Implantation of Be at room temperature, annealing at 550 °C for 30 s, deposition of SiN bondpads and AR coating, passivation with SU-8, deposition of Ti/Au contacts.
5：Data Analysis Methods:
Current-voltage (I-V) characteristics, Capacitance-Voltage (C-V) measurements, secondary ion mass spectrometry (SIMS).
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