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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文(中国)
  • [IEEE 2019 IEEE 4th International Conference on Image, Vision and Computing (ICIVC) - Xiamen, China (2019.7.5-2019.7.7)] 2019 IEEE 4th International Conference on Image, Vision and Computing (ICIVC) - A Method for Generating Spray Trajectory of a Shoe Sole Based on Laser Vision

    摘要: A ?rst proof-of-concept mm-sized implantable device using ultrasonic power transfer and a hybrid bi-directional data communication link is presented. Ultrasonic power transfer enables miniaturization of the implant and operation deep inside the body, while still achieving safe and high power levels (100 W to a few mWs) required for most implant applications. The current implant prototype measures 4 mm 7.8 mm and is comprised of a piezoelectric receiver, an IC designed in 65 nm CMOS process and an off-chip antenna. The IC can support a maximum DC load of 100 W for an incident acoustic intensity that is 5% of the FDA diagnostic limit. This demonstrates the feasibility of providing further higher available DC power, potentially opening up new implant applications. The proposed hybrid bi-directional data link consists of ultrasonic downlink and RF uplink. Falling edge of the ultrasound input is detected as downlink data. The implant transmits an ultra-wideband (UWB) pulse sequence as uplink data, demonstrating capability of implementing an energy-ef?cient M-ary PPM transmitter in the future.

    关键词: piezoelectric receivers,bi-directional data communication,mm-sized implants,CMOS,ultrasonic power transfer,active recti?er,IMD,antennas,radio transmitters,AC-DC converter,implantable biomedical devices

    更新于2025-09-19 17:13:59

  • [IEEE 2018 Fifth International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - Tehran, Iran (2018.12.18-2018.12.20)] 2018 Fifth International Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT) - MMWaTT 2018 Organizing Committee

    摘要: This paper presents an all-digital phase-locked loop (AD-PLL) using a voltage-domain digitization realized by an analog-to-digital converter (ADC) instead of adopting a traditional time-to-digital converter (TDC) which usually suffers from a tradeoff in resolution and power consumption. It consists of an 18 bit class-C digitally controlled oscillator (DCO), a 4 bit comparator, a digital loop filter (DLF), and a frequency-locked loop (FLL). Implemented in 65 nm CMOS technology, the proposed PLL reaches an in-band phase noise of ?112 dBc/Hz and an RMS jitter of 380 fs at a carrier frequency of 2.2 GHz. A figure of merit (FoM) of ?242 dB was achieved with a power consumption of only 4.2 mW.

    关键词: frequency synthesizer,sub-sampling,CMOS,voltage-domain,analog-to-digital converter (ADC),All-digital phase-locked loop (AD-PLL),low-power

    更新于2025-09-19 17:13:59

  • [IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Parametric Simulation of a??Hot-wirea??-based Gas Velocity Sensor Using Optical Fiber

    摘要: A new quadrature oscillator topology is proposed, which arranges four low-Q series LC tanks in a ring structure driven by inverters operating in class-D. With a very small area of 0.007 that is comparable to conventional ring oscillators, this oscillator has 7–20 dB better phase noise FoM of 177 dB. It is widely tunable for nearly an octave from 2.66 to 4.97 GHz.

    关键词: low inductor,phase noise,wide tuning,low area,quadrature oscillator,LC oscillator,ring oscillator,series LC,Class-D oscillator,nanoscale CMOS

    更新于2025-09-19 17:13:59

  • [IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Dielectric and Plasmonic Vivaldi Antennas for On-Chip Wireless Communication

    摘要: The ?rst quanta image sensor jot with photon counting capability is demonstrated. The low-voltage device demonstrates less than 0.3e- r.m.s. read noise on a single read out without the use of avalanche gain and single-electron signal quantization is observed. A new method for determining read noise and conversion gain is also introduced.

    关键词: CMOS image sensor,high conversion gain,low read noise,photon counting,jot device,quanta image sensor

    更新于2025-09-19 17:13:59

  • [IEEE 2019 Photonics North (PN) - Quebec City, QC, Canada (2019.5.21-2019.5.23)] 2019 Photonics North (PN) - Femtosecond Laser Opening of Hollow-Filament Arrays: the Fiber Bragg Grating Opto-fluidic Sensor

    摘要: The development of two new types of high-density, electroless plated microelectrode arrays for CMOS-based high-sensitivity direct bacteria and HeLa cell counting are presented. For emerging high-sensitivity direct pathogen counting, two technical challenges must be addressed. One is the formation of a bacteria-sized microelectrode, and the other is the development of a high-sensitivity and high-speed amperometry circuit. The requirement for microelectrode formation is that the gold microelectrodes are required to be as small as the target cell. By improving a self-aligned electroless plating technique, the dimensions of the microelectrodes on a CMOS sensor chip in this work were successfully reduced to 1.2 μm × 2.05 μm. This is 1/20th of the smallest size reported in the literature. Since a bacteria-sized microelectrode has a severe limitation on the current flow, the amperometry circuit has to have a high sensitivity and high speed with low noise. In this work, a current buffer was inserted to mitigate the potential fluctuation. Three test chips were fabricated using a 0.6-μm CMOS process: two with 1.2 μm × 2.05 μm 1024 × 1024 and 4 μm × 4 μm (16 × 4) sensor arrays and one with 6-μm × 6-μm (16 × 16) sensor arrays; and the microelectrodes were formed on them using electroless plating. The uniformity among the 1024 × 1024 electrodes arranged with a pitch of 3.6 μm × 4.45 μm was optically verified. For improving sensitivity, the trenches on each microelectrode were developed and verified optically and electrochemically for the first time. Higher sensitivity can be achieved by introducing a trench structure than by using a conventional microelectrode formed by contact photolithography. Cyclic voltammetry (CV) measurements obtained using the 1.2 μm × 2.05 μm 16 × 4 and 6-μm × 6-μm 16 × 16 sensor array with electroless-plated microelectrodes successfully demonstrated direct counting of the bacteria-sized microbeads and HeLa cells.

    关键词: microelectrode array,point-of-care testing,HeLa cells,electroless plating,Bacteria counting,CMOS

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Spectral Impacts on the Performance of mc-Si and New-Generation CdTe Photovoltaics in the Brazilian Northeast

    摘要: We have developed a 5 × 5 mm2 compact silicon-photonic receiver with a 28-nm CMOS transimpedance-amplifier (TIA) chip. The receiver chip was designed using a photonics—electronics convergence design technique for the realization of high-speed and high-efficiency operation because the interfaces of the optical and electrical components greatly influence the receiver characteristics. Optical pins were used to obtain easy optical alignment between the multimode fibers and the germanium photodetectors. An aluminum stripline between the PD and the TIA enhanced the 3-dB bandwidth because its characteristic impedance is greater than the TIA input impedance. Coplanar waveguides (CPWs) on the etched SOI wafer achieved a low insertion loss because the overlap between the electric fields of the CPWs and the silicon layer was reduced. We demonstrated 25-Gb/s error-free operation at both 25 and at 85 °C. The minimum sensitivities and power consumptions of the receivers were ?11.0 dBm and 2.3 mW/Gb/s at 25 °C and ?10.2 dBm and 2.5 mW/Gb/s at 85 °C, respectively. These results show that our receiver can be applied for practical use at high temperatures.

    关键词: optoelectronic integrated circuit,silicon photonics,optical interconnections,CMOS transimpedance amplifier,optical receivers,multimode fiber transmission

    更新于2025-09-19 17:13:59

  • [IEEE 2019 Photonics North (PN) - Quebec City, QC, Canada (2019.5.21-2019.5.23)] 2019 Photonics North (PN) - Differences between foetal and adult meniscus and cartilage revealed by Polarization Second Harmonic Generation Microscopy

    摘要: This paper presents an all-digital phase-locked loop (AD-PLL) using a voltage-domain digitization realized by an analog-to-digital converter (ADC) instead of adopting a traditional time-to-digital converter (TDC) which usually suffers from a tradeoff in resolution and power consumption. It consists of an 18 bit class-C digitally controlled oscillator (DCO), a 4 bit comparator, a digital loop filter (DLF), and a frequency-locked loop (FLL). Implemented in 65 nm CMOS technology, the proposed PLL reaches an in-band phase noise of ?112 dBc/Hz and an RMS jitter of 380 fs at a carrier frequency of 2.2 GHz. A figure of merit (FoM) of ?242 dB was achieved with a power consumption of only 4.2 mW.

    关键词: analog-to-digital converter (ADC),All-digital phase-locked loop (AD-PLL),voltage-domain,sub-sampling,frequency synthesizer,low-power,CMOS

    更新于2025-09-19 17:13:59

  • Optimal Photonic Crystal Cavities for Coupling Nanoemitters to Photonic Integrated Circuits

    摘要: Photonic integrated circuits that are manufactured with mature semiconductor technology hold great promise for realizing scalable quantum technology. Efficient interfaces between quantum emitters and nanophotonic devices are crucial building blocks for such implementations on silicon chips. These interfaces can be realized as nanobeam optical cavities with high quality factors and wavelength-scale mode volumes, thus providing enhanced coupling between nano-scale quantum emitters and nanophotonic circuits. Realizing such resonant structures is particularly challenging for the visible wavelength range, where many of the currently considered quantum emitters operate, and if compatibility with modern semiconductor nanofabrication processes is desired. Here, it is shown that photonic crystal nanobeam cavities for the visible spectrum can be designed and fabricated directly on-substrate with high quality factors and small mode volumes. Designs are compared based on deterministic and mode-matching methods and the latter is found advantageous for on-substrate realizations. The results pave the way for integrating quantum emitters with nanophotonic circuits for applications in quantum technology.

    关键词: CMOS compatible,photonic crystal cavities,integrated photonics,high quality factor

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE International Symposium on Phased Array System & Technology (PAST) - Waltham, MA, USA (2019.10.15-2019.10.18)] 2019 IEEE International Symposium on Phased Array System & Technology (PAST) - A Low Profile Tightly Coupled Antenna Array with 80?° Scanning for Multifunctional Applications

    摘要: This paper presents an all-digital phase-locked loop (AD-PLL) using a voltage-domain digitization realized by an analog-to-digital converter (ADC) instead of adopting a traditional time-to-digital converter (TDC) which usually suffers from a tradeoff in resolution and power consumption. It consists of an 18 bit class-C digitally controlled oscillator (DCO), a 4 bit comparator, a digital loop filter (DLF), and a frequency-locked loop (FLL). Implemented in 65 nm CMOS technology, the proposed PLL reaches an in-band phase noise of ?112 dBc/Hz and an RMS jitter of 380 fs at a carrier frequency of 2.2 GHz. A figure of merit (FoM) of ?242 dB was achieved with a power consumption of only 4.2 mW.

    关键词: sub-sampling,analog-to-digital converter (ADC),voltage-domain,All-digital phase-locked loop (AD-PLL),frequency synthesizer,CMOS,low-power

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ~2× Quantum Efficiency Enhancement across L-Band

    摘要: Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.

    关键词: germanium,longer wavelength detection,photodetectors,silicon nitride stressor,CMOS-compatible

    更新于2025-09-16 10:30:52