- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR Photodetector Arrays with High Responsitivity
摘要： Due to its excellent electrical and optical property, tin selenide (SnSe), a typical candidate of two-dimentional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remain a great challenge which limit its practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization are deposited via a scalable magnetron sputtering method. The results show that the SnSe photodetector is highly sensitive to a broad wavelength in the UV-Visible-NIR range, especially showing an extremely high responsivity of 277.3 A W -1 with the corresponding external quantum efficiency of 8.5×104% and detectivity of 7.6×1011 Jones. These figures-of-merits are among the best performance for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of the localized defects are discussed in details. The results indicate that the few-layered SnSe films from the sputtering growth would have great potential in designing high-performance photodetector arrays.
关键词： tin selenide,detectivity,responsivity,optoelectronics,SnSe,UV-Visible-NIR,2D semiconductors,external quantum efficiency,photodetector,magnetron sputtering
更新于2025-09-19 17:13:59
-
Copper doping of Sb2S3: fabrication, properties, and photovoltaic application
摘要： Sb2S3 solar cells are lagging behind conventional thin-film solar cells such as silicon solar cells and cadmium telluride solar cells in the power conversion efficiency (PCE). One of the most prominent problems is that the carrier concentration of Sb2S3 is relatively low. In order to increase the carrier concentration, elemental Cu was doped into Sb2S3 film by radio-frequency (RF) magnetron sputtering. We proved that Cu was doped into Sb2S3 films and mainly anchored with sulfur in the form of copper chalcogenide species at the surface and grain boundaries of Sb2S3. The doping of Cu essentially affects the physical and electrical properties of RF-sputtered Sb2S3 films such as the optical band gap, crystallinity, chemical composition, morphology, and carrier concentration. Specially, the electronic carrier concentration is remarkably increased from 6.28 × 109 to 6.06 × 1010 cm?3 and the Fermi level is also significantly uplifted after prudent doping with Cu. Planar solar cells based on RF-sputtered Cu-doped Sb2S3 absorber deliver an increased PCE of 1.13% and show good stability. This research proves that doping of Cu is an alternative and effective way to improve the electronic property of Sb2S3 films and enhance the performance of Sb2S3 solar cells.
关键词： RF magnetron sputtering,Cu-doping,photovoltaic application,carrier concentration,Sb2S3 solar cells
更新于2025-09-16 10:30:52
-
Performance improvement of perovskite solar cells using vanadium oxide interface modification layer
摘要： To improve the performance of perovskite solar cells (PSCs), vanadium oxide (VOx) film was deposited as an interface modification layer (IML) by a radio frequency magnetron sputtering system. The VOx IML was utilized to modify the interface between the indium tin oxide (ITO) anode electrode and the poly(3,4-ethylenedioxythiophene)-poly (styrene sulfonate) (PEDOT:PSS) hole transport layer (HTL). The valence band maximum (VBM) of 4.94 eV of the VOx films was measured by an ultraviolet photoelectron spectroscopy (UPS). Using the optical energy bandgap and the VBM of the VOx film, the conduction band minimum (CBM) energy level was 2.12 eV. This phenomenon verified that the VOx IML could be an electron blocking layer and made a more match energy level between the work function of ITO anode electrode and the highest occupied molecular orbital (HOMO) of PEDOT:PSS HTL. Using the measurement of contact angle, the surface energy of PEDOT:PSS HTL spun on VOx IML and ITO anode electrode was evaluated as 47.76 mJ/m2 and 38.21 mJ/m2, respectively. The enhanced surface energy of the PEDOT:PSS HTL spun on VOx IML could improve the adhesion ability of the perovskite absorption layer spun on the PEDOT:PSS HTL. Consequently, the carrier extraction could be enhanced and the leakage current could be reduced by the predominant functions of VOx IML. Therefore, the performances of the PSCs were significantly improved. The power conversion efficiency (PCE) of the PSCs with VOx IML was enhanced from 9.43% to 13.69% in comparison with the conventional PSCs without VOx IML.
关键词： Vanadium oxide,Perovskite solar cells,Interface modification layer,Radio frequency magnetron sputtering system
更新于2025-09-16 10:30:52
-
Thin films of Au-Al2O3 for plasmonic sensing
摘要： This works reports on the development of nanoplasmonic thin films, composed of Au nanoparticles embedded in an Al2O3 matrix. The Au-Al2O3 thin films were deposited by magnetron sputtering, and then subjected to thermal treatments (in-air) to promote the growth of the Au nanoparticles. The change of the number of gold pellets placed in the erosion zone of the aluminium target, originated Au concentrations in the films from 8.9 at.% to 20.7 at.%. While the Al2O3 matrix remained roughly stoichiometric and amorphous after the thermal treatment, a progressive crystallization of the Au nanoparticles was observed when the annealing temperature increased from 400 °C to 700 °C. Nonetheless, the amorphous matrix limited the growth of Au nanoparticles up to 20 nm. Moreover, the application of an argon plasma treatment enabled the removal of superficial layers, increasing the density of Au nanoparticles partially exposed at the films’ surface. Envisaging the application in localized surface plasmon resonance sensors, the thin films were tested using two dielectric (liquid) environments, showing a consistent response under different H2O/DMSO cycles, yet with low sensitivities (few nm/RIU). To enhance the sensitivity of these thin film system other strategies are discussed.
关键词： Localized Surface Plasmon Resonance,Al2O3 Matrix,Au Nanoparticles,Plasmonic Sensing,Thin Films,Magnetron Sputtering
更新于2025-09-16 10:30:52
-
Study of optical and structural properties of sputtered aluminum nitride films with controlled oxygen content to fabricate Distributed Bragg Reflectors for ultraviolet A
摘要： Aluminum nitride (AlN) films with controlled oxygen content were deposited on silicon substrates, and optical properties studied with dependency on film morphology. Combinations of argon (Ar) and nitrogen (N2) gases were used in RF magnetron sputtering of an AlN target. The resulting refractive index ranging from 1.6 to 2.0 at 400 nm was tuned by controlling the sputter gas flow rate ratio of Ar and N2. The resulting refractive index is associated with density and aluminum nitride content of the thin films. Distributed Bragg Reflectors (DBRs) optimized for ultraviolet-A reflectivity were fabricated with pairs of alternating AlN thin films using an explicit combination of low-n and high-n to further investigate the thin film optical properties. The effect of structural transformation in the DBR stack on the progress of optical properties was studied. The DBRs exhibit a negligible extinction coefficient, utilizing precise control of oxygen incorporation with one sputtering target.
关键词： Optical properties,Materials interface,Aluminum oxynitride,Aluminum nitride,AlN,Refractive index,DBR,Magnetron sputtering
更新于2025-09-16 10:30:52
-
Electrochemical performance of indium-tin-oxide-coated lossy-mode resonance optical fiber sensor
摘要： Analysis of liquids performed in multiple domain, e.g., optical and electrochemical (EC), has recently focus significant attention. Our previous works have shown that a simple device based on indium-tin-oxide (ITO) coated optical fiber core may be used for optical monitoring of EC processes. At satisfying optical properties and thickness of ITO a lossy-mode resonance (LMR) effect can be obtained and used for monitoring of optical properties of an analyte in proximity of the ITO surface. However, EC response of the ITO-LMR device to a redox probe has not been achieved for ITO-LMR sensor whereas it is generally observed for commercially available ITO electrodes. The changes in the response to a redox probe are typically used as a sensing parameter when EC label-free sensing is considered, so it is crucial for further development of combined LMR-EC sensing concept. In this work, we focus on enhancing the EC activity of the device by tuning ITO magnetron sputtering deposition parameters. Influence of the deposition pressure on the ITO properties has been the main consideration. Both optical and EC readouts in 0.1 M KCl containing such redox probes as 1 mM of K3[Fe(CN)6] or 1 mM 1,1′-Ferrocenedimethanol were discussed at different scan rate. The performed studies confirm that for optimized ITO properties the ITO-LMR sensor used as the EC electrode may also show excellent EC performance. The observed EC processes are quasi-reversible and diffusion-controlled. Moreover, for the devices, which offer improved EC response, an optical monitoring of the EC process is also possible. According to our best knowledge, fully functional combined optical and EC sensor, where optical effect is resonance-based and other than well-known surface plasmon resonance, is presented for the first time.
关键词： Electrochemical properties,Cyclic voltammetry,Optical properties,Lossy-mode resonance,Optical fiber sensor,Indium tin oxide,Magnetron sputtering
更新于2025-09-16 10:30:52
-
Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells
摘要： The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.
关键词： ZnO,Oxide thin film,Cu2O,Magnetron sputtering,AZO,Solar cells
更新于2025-09-16 10:30:52
-
Synthesis of Anatase (Core)/Rutile (Shell) Nanostructured TiO <sub/>2</sub> Thin Films by Magnetron Sputtering Methods for Dye-Sensitized Solar Cell Applications
摘要： Currently, anatase/rutile core/shell structures are accepted as highly efficient building blocks for TiO2-based catalysts or photo-electrodes used in dye-sensitized solar cells (DSSCs). It is understood that a thin layer of rutile covering the core anatase pillar would improve the performance of DSSCs by retarding the charge recombination at the semiconductor/sensitizer/electrolyte interfaces. In this work, we report on the synthesis of core/shell nanostructured TiO2 thin films using reactive magnetron sputtering at a glancing angle with different power applying modes: well-separated pillars of pure anatase were synthesized using the DC mode, and then, high-pulse peak power was applied to the Ti target (high power impulse magnetron sputtering – HiPIMS) resulting in the covering of the anatase columns with a thin layer of rutile. The latter technique is well-known to increase the energy load during the growth of the film which is a key parameter to successfully obtain the TiO2 phase normally only achieved at high temperature, i.e. rutile. The peak current, the frequency and the pulse width were optimized in order to obtain the desired crystalline structure and thickness of the rutile top layer. Scanning Electron Microscopy (SEM) cross-section views of the synthesized films clearly show that the pillar-like structures are not affected by the energetic species striking the surface during the HiPIMS process. Grazing Incidence X-Ray Diffraction (GIXRD) suggests the presence of both anatase and rutile phases in the films. Further characterization of the anatase/rutile core/shell interface by electron transmission techniques such as Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS) mapping confirm the hypothesis and reveal that the anatase pillars are partly covered by a rutile crust.
关键词： EELS,Dye-Sensitized Solar Cells,TEM,TiO2,GLAD,Reactive Magnetron Sputtering,core/shell nanostructures,HiPIMS
更新于2025-09-12 10:27:22
-
Cupric oxide film with a record hole mobility of 48.44?cm2/Vs via direct–current reactive magnetron sputtering for perovskite solar cell application
摘要： Cupric iodide and cuprous oxide as hole–transporting layer (HTL) materials in perovskite solar cells (PSCs) have been reported. However, the compositional instability and poor electrical conductivity of ?lms in ambient air have limited their applications in PSCs. Cupric oxide (CuO) ?lms may be used as a HTL material in PSCs due to their high electrical conductivity and high stability in ambient air even if their hole mobility is still required to further increase. Herein, single-phase monoclinic CuO ?lms with p–type conduction were room-temperature prepared via direct–current reactive magnetron sputtering, thereby garnering low–cost advantage. CuO ?lm prepared at 1:3 O2/Ar ?ow ratio (Ro/a) was best crystallized and preferred ??1 1 1? oriented, thereby resulting in a record mobility of 48.44 cm2/Vs and small electrical resistivity of 0.50 Ω?cm. The PSCs with CuO as HTL material obtained 1.3% power conversion e?ciency, indicating that CuO ?lms with record hole mobility could be used as a HTL material in PSCs.
关键词： Hole–transporting layer,Cupric oxide,Perovskite solar cells,Magnetron sputtering,Optical properties,Electrical properties
更新于2025-09-12 10:27:22
-
Magnetron sputtered Sb2Se3-based thin films towards high performance quasi-homojunction thin film solar cells
摘要： Sb2Se3 is a promising candidate for environment-friendly and cost-e?ciently thin ?lm photovoltaics thanks to its material advantages and superior optoelectronic properties. However, it has intrinsically low electrical conductivity, which leads to unsatisfactory device performance and limited scope of applications. Herein, we demonstrated an e?ective strategy of electrical conductivity-induced Sb2Se3-based photovoltaic performance improvement. Three Sb2Se3-based targets with chemical composition of Sb2Se3, Sb2Se3.3 and Sb2(Se0.9I0.1)3 have been ?rstly prepared by using high-temperature melting technique. Then the high-quality thin ?lms can be obtained through an e?ective Radio Frequency (RF) magnetron sputtering process. A novel Sb2Se3 quasi-homojunction thin ?lm solar cell was fabricated for the ?rst time and the highest power conversion e?ciency reaches already a highly interesting 2.65%. The combined features of unique quasi-homojunction device structure and advantageous full-vacuum preparation process further demonstrated its attractive potential for thin ?lm photovoltaic applications.
关键词： Sb2Se3,Quasi-homojunction,Magnetron sputtering,Thin ?lm solar cells,Electrical conductivity
更新于2025-09-12 10:27:22