摘要： Sb2Se3 is a promising candidate for environment-friendly and cost-e?ciently thin ?lm photovoltaics thanks to its material advantages and superior optoelectronic properties. However, it has intrinsically low electrical conductivity, which leads to unsatisfactory device performance and limited scope of applications. Herein, we demonstrated an e?ective strategy of electrical conductivity-induced Sb2Se3-based photovoltaic performance improvement. Three Sb2Se3-based targets with chemical composition of Sb2Se3, Sb2Se3.3 and Sb2(Se0.9I0.1)3 have been ?rstly prepared by using high-temperature melting technique. Then the high-quality thin ?lms can be obtained through an e?ective Radio Frequency (RF) magnetron sputtering process. A novel Sb2Se3 quasi-homojunction thin ?lm solar cell was fabricated for the ?rst time and the highest power conversion e?ciency reaches already a highly interesting 2.65%. The combined features of unique quasi-homojunction device structure and advantageous full-vacuum preparation process further demonstrated its attractive potential for thin ?lm photovoltaic applications.