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Temperature-Dependent Electrical Characteristics of β-Ga <sub/>2</sub> O <sub/>3</sub> Diodes with W Schottky Contacts up to 500°C
摘要： The development of thermally stable contacts capable of high temperature operation are necessary for Ga2O3 high power rectifiers. We have measured the electrical characteristics of sputter-deposited W Schottky contacts with Au overlayers for reducing sheet resistance on n-type Ga2O3 before and after device operation up to 500°C. Assuming thermionic emission is dominant, the extracted barrier height decreases with measurement temperature from 0.97 eV (25°C) to 0.39 eV (500°C) while showing little change from its initial value of 0.97 eV after cooling down from each respective operation temperature. The room temperature value is comparable to that obtained by determining the energy difference between binding energy of the Ga 3d core level and the valence band of the Ga2O3 when W is present, 0.80 ± 0.2 eV in this case. The Richardson constant was 54.05 A.cm?2.K?2 for W and the effective Schottky barrier height at zero bias (eφb0) was 0.92 eV from temperature-dependent current-voltage characteristics. The temperature coefficient for reverse breakdown voltage was 0.16 V/K for W/Au and 0.12 V/K for Ni/Au. The W-based contacts are more thermally stable than conventional Ni-based Schottkies on Ga2O3 but do show evidence of Ga migration through the contact after 500°C device operation.
关键词： electrical characteristics,thermal stability,high temperature operation,Ga2O3,Schottky contacts
更新于2025-09-23 15:23:52
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Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor
摘要： In this paper, we demonstrate and study volatile memory characteristics of the sol-gel SnOx semiconductor. The SnOx exhibits a significant self-rectifying behavior and high nonlinearity. Low reverse-biased currents and high forward-biased currents are observed in the positive and negative voltage regions, respectively. The rectifying ratio can reach 3.7 × 10^5, and the selection ratio (I@Vread/I@0.5Vread) is 10^2. A pinched current hysteresis is found in the forward-biased region, which indicates the volatile memory characteristics of the SnOx memory. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) is ~10^5. In addition, the stability test reveals that the memory can repeatedly operate for over 1.5 × 10^3 cycles.
关键词： Hysteresis,Solution process,Oxide semiconductor,Thin film,Electrical characteristics
更新于2025-09-23 15:22:29
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An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts
摘要： Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I ? V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I ? V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
关键词： Hydrogen sensing,Zinc oxide (ZnO) thin film,Electrical characteristics,Schottky diode,Metal-semiconductor interface,Palladium catalyst
更新于2025-09-23 15:22:29
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Effects of material degradation on electrical and optical characteristics of surface dielectric barrier discharge
摘要： In this paper, screen-printed electrodes are asymmetrically fabricated on three different dielectrics (multi-layered polyimide, quartz, and alumina). Supplied with AC power, sustainable surface dielectric barrier discharge (SDBD) plasma is generated in atmospheric pressure. During plasma processing, different changes of material degradation and discharge images are observed. The corresponding electrical and optical characteristics are investigated by optical emission spectra (OES) and Lissajous figure analysis, respectively. It is found that both dielectric degradation and electrode erosion occur on the surface of the polyimide based SDBD device, while there is only electrode erosion for the quartz and alumina based devices, which results in different changes of electrical characteristics. OES calculated results show that with an increase of discharge aging time, electron temperature increases for the polyimide based SDBD device and decreases for quartz and alumina based SDBD devices, while all the gas temperatures of three dielectrics increase with the aging time. Furthermore, compared to vibrational temperature and gas temperature, the distribution of electron temperature is more suitable for evaluating the changes in discharge uniformity during plasma processing.
关键词： electrical characteristics,plasma processing,optical characteristics,surface dielectric barrier discharge,material degradation
更新于2025-09-23 15:21:21
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Influence of an Insulator Layer on the Charge Transport in a Metal/Insulator/n-AlGaN Structure
摘要： In this work, a parametric study revealing the impact of metal-insulator-semiconductor (MIS) structure in improving the electron injection between the n-AlGaN layer and the electrode metal is conducted. After inserting an insulator at the surface between the n-AlGaN layer and the electrode metal, the energy band bending of the thin insulator manipulates the conduction band barrier height between the electrode and the n-AlGaN layer, which enables the electrons to more efficiently tunnel through the thin insulator barrier. As a result, the electrical characteristics for the devices are significantly improved if the MIS structure is optimized. Furthermore, the impact of the affinity, the relative dielectric constant, and the bandgap for the insulator on the electron injection is investigated. Meanwhile, it is found that the electron injection is sensitive to the thickness and the length for the insulator. Detailed analysis regarding the electron transport and the device physics are reported in this work.
关键词： insulators,semiconductors,electrical characteristics,electron transport,n-AlGaN
更新于2025-09-19 17:15:36
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SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS
摘要： In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol–gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I–V and C/G–V characteristics under dark and different illumination conditions. Herein, from I–V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of Ion/Ioff were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The Rs–V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.
关键词： sol–gel,photoresponse,photodetector,doped ZnO,Electrical characteristics
更新于2025-09-16 10:30:52
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SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors
摘要： In this research, we have produced Al/CdS nanoparticles-CdO/p-si/Al photodetetor and investigated its optical and electrical characteristics for various optoelectronic applications. The CdO thin film was covered by using sol-gel spin coating method onto the silicon, followed by CdS nanoparticles constitution by the help of SILAR technique. In order to examine the morphological and optical characteristics of fabricated photodetector, the field emission scanning electron microscopy and UV-Vis spectroscopy were utilized, and the band gap of the prepared film was determined as 2,17 eV with the help of these analyzes. The current behavior against the varying voltage values were investigated for the different intensities of solar light conditions and the significant diode parameters were computed by the use of this measurements. As a result of this computation, the barrier height value was found to be 0.49 eV while the ideality factor value was 3.2, and the photoresponse of the photodetector was measured as approximatelly 2.65 × 103. Besides, the transient photocurrent and photocapacitance charactersitics were examined for distinct light conditions. Finally, the interface states were calculated from the capacitance/conductance–voltage (C/G–V) measurements.
关键词： Optical characteristics,SILAR method,Sol-gel method,CdO thin film,Electrical characteristics,CdS nanoparticles
更新于2025-09-12 10:27:22
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Sol-Gel Derived Dip Coated ZnO – La <sub/>2</sub> O <sub/>3</sub> Thin Film Transistors
摘要： ZnO thin ?lms are fabricated utilizing a cost effective sol-gel dip coating technique and potentially applied as active material in thin ?lm transistors (TFT). The channel length of the TFT is maintained at 40 μm. Thermally deposited high –k La2O3 is used as dielectric material. The fabricated ZnO ?lms are annealed in oxygen atmosphere at 500?C for 1 hour and characterized by XRD, EDX and SEM analysis. The TFTs are fabricated in top gate coplanar electrodes structure on glass substrates. The electrical characteristics of the TFTs are investigated and some important electrical parameters are evaluated. The TFTs exhibit ?eld effect mobility of 1.9 cm2/VS, low threshold voltage of 2.5 Volt, high ON/OFF current ratio of 107, sub-threshold swing of 0.8V/decade, transconductace of 1.2 × 10?3 mho and gain band-width product of 20 kHz.
关键词： ZnO,sol-gel dip coating,thin film transistors,electrical characteristics,La2O3
更新于2025-09-11 14:15:04
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Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes
摘要： The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in details the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.
关键词： optical and electrical characteristics,butyl amine,crystal growth,bulky organic cations,perovskite light emitting diodes
更新于2025-09-04 15:30:14