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[IEEE 2018 UKSim-AMSS 20th International Conference on Computer Modelling and Simulation (UKSim) - Cambridge, United Kingdom (2018.3.27-2018.3.29)] 2018 UKSim-AMSS 20th International Conference on Computer Modelling and Simulation (UKSim) - Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications
摘要： This paper presents a comprehensive analysis of the photogeneration effect in high electron mobility transistors (HEMTs) under optical illumination. The study focuses on the impact of photogenerated carriers on the device performance, particularly in the context of simulation and modeling. The research utilizes an interpreter-based simulation approach to accurately model the photogeneration process and its effects on the electrical characteristics of HEMTs. The results demonstrate significant changes in the device behavior under illumination, highlighting the importance of considering optical effects in the design and optimization of HEMT-based optoelectronic devices. The findings provide valuable insights into the photoresponse of HEMTs and contribute to the advancement of optoelectronic simulation techniques.
关键词： simulation,Photogeneration,interpreter,HEMT,optical illumination
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A GaN/Si Hybrid T-Type Three-Level Configuration for Electric Vehicle Traction Inverter
摘要： The inverter partial load performance is extremely important for the weighted average efficiency and vehicle mileage as during 95% of the driving time, the traction inverter for an electric vehicle is operating under < 30% full load. A GaN/Si hybrid T-Type Three-level configuration is proposed to enhance the light load efficiency. Due to the zero-reverse recovery of GaN HEMTs and the halved voltage stress across the device, the switching energy of IGBT is significantly reduced. The GaN neutral clamping leg will be disabled at full load to avoid employing full current-rating GaN HEMTs for BOM cost reduction. A GaN/Si hybrid T-type three-level phase-leg is prototyped to validate the design concept. Compared with conventional two-level configuration, the switching-on loss of IGBT in hybrid T-type configuration is reduced by about 92%, and the switching-off loss is reduced by about 83% in the whole operating range. The system weighted-average efficiency analysis for a 150kW, 800V traction inverter is also presented.
关键词： Three-level inverter,GaN HEMT,Traction Inverter
更新于2025-09-23 15:22:29
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Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN Gate HEMTs Under Forward Gate Stress
摘要： The threshold voltage (VTH) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional VTH shift (ΔVTH) with the critical gate voltage (VG) of 6 V was observed. The carrier transport mechanisms underlying the ΔVTH were extensively investigated through the voltage-dependent, time-resolved, and temperature-dependent gate current. The gate current is decomposed into electron and hole current in three distinct regions with respect to VG, which are off-state for VG < 1.2 V (VTH), on-state for 1.2 V < VG < 5 V and “gate-injected” region for VG > 5 V. In off-state, the electrons were thermally activated and transport towards the gate, while electron-trapping governed by the space charge limited conduction (SCLC) in AlGaN barrier was observed in on-state and “gate-injected” region. Such an electron-trapping effect results in the positive VTH shift for VG < 6 V. Meanwhile, the marginal hole transport from gate by thermal activation was also captured by gate current, which features negligible impact on VTH. However, for VG > 6 V, a drastic hole injection triggered by high VG takes place that causes subsequent hole-trapping in AlGaN barrier and hole-injection into GaN buffer. The injected holes enhance the positive charge in the gate region and turned the positively shifted VTH into a negative shift.
关键词： hole injection,threshold voltage shift,p-GaN HEMT,electron trapping,carrier transport mechanisms,gate stress
更新于2025-09-23 15:22:29
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Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
摘要： Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (VTH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small VTH hysteresis as well as deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.
关键词： monolithic integration,ultrathin-barrier,GaN,E/D-mode,MIS-HEMT,inverter,AlGaN/GaN heterostructure,Si substrate
更新于2025-09-23 15:22:29
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[IEEE 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics) - Omsk, Russia (2018.11.13-2018.11.15)] 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics) - Automatic Nonlinear Modeling Technique for Gaas HEMT
摘要： A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.
关键词： compact nonlinear model,microwave transistor,large-signal model,GaAs HEMT
更新于2025-09-23 15:22:29
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Different Types of Field-Effect Transistors - Theory and Applications || Quantum Confinement in High Electron Mobility Transistors
摘要： Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into discrete subbands. The spacing between these quantized bands is a very important parameter that has been perfected over the years into device applications. Most of these devices form low-dimensional charge carriers that potentially allow optical transitions between the subbands in such nanostructures. The transition energy differences between the quantized bands/levels typically lie in the infrared or the terahertz region of the electromagnetic spectrum and can be designed according to the application in demand. Thus, a proper understanding and a suitable external control of such intersubband transitions (ISTs) are not only important aspects of fundamental research but also a necessity for optoelectronic device applications specifically towards closing the terahertz gap.
关键词： HEMT,intersubband transition,infrared,heterojunction,terahertz
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen, China (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
摘要： Both enhancement- and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts ?Vth and hence to systematically study the underlying mechanism. The experimental results reveal that ?Vth can be as high as 1.0 V at VG,max = 5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary ?Vth is frequency independent but the second onset of voltage shifts (?V2) shows obvious frequency dependence. These results imply the likely mechanism of slow (deep) Al2O3 interface traps accounting for ?V1 hysteresis, and fast (shallow) interface traps accounting for ?V2.
关键词： AlGaN/GaN MIS-HEMT,Al2O3/III-N interface traps (fast and slow) and threshold voltage hysteresis.
更新于2025-09-23 15:21:21
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Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
摘要： We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning were degraded, while there is almost no degradation for the fresh ones. The hot electron stress leads to the significantly positive shift of threshold voltage and the notable decrease of drain-to-source current for the AlGaN/GaN HEMTs of hydrogen poisoning. For the AlGaN/GaN HEMTs of hydrogen poisoning, the trap density increases by about one order of magnitude after the hot electron stress experiment. The physical mechanism can be attributed to electrically active traps due to the dehydrogenation of passivated point defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this study may be useful in the design and application of AlGaN/GaN HEMTs.
关键词： Hydrogen Poisoning,Hot Electron Stress,GaN HEMT
更新于2025-09-23 15:21:21
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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
摘要： The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement mode transistors are investigated using temperature-dependent dc gate current measurements. In each of the different gate voltage regions, a physical model is proposed and compared to experiment. At negative gate bias, Poole–Frenkel emission (PFE) occurs within the passivation dielectric from gate to source. At positive gate bias, the p-GaN/AlGaN/GaN “p-i-n” diode is in forward operation mode, and the gate current is limited by hole supply at the Schottky contact. At low gate voltages, the current is governed by thermionic emission with Schottky barrier lowering in dislocation lines. Increasing the gate voltage and temperature results in thermally assisted tunneling (TAT) across the same barrier. An improved gate process reduces the gate current in the positive gate bias region and eliminates the onset of TAT. However, at high positive gate bias, a sharp increase in current is observed originating from PFE at the metal/p-GaN interface. Using the extracted conduction mechanisms for both devices, accurate lifetime models are constructed. The device fabricated with the novel gate process exhibits a maximum gate voltage of 7.2 V at t1% = 10 years.
关键词： time-dependent breakdown (TDB),p-GaN gate,high-electron-mobility transistor (HEMT),enhancement mode,gallium nitride (GaN),Conduction mechanism
更新于2025-09-23 15:21:21
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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Analysis of Thermal Properties of Power Multifinger HEMT Devices
摘要： In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. We have deployed a temperature measurement approach utilizing electrical I-V characteristics of the neighboring Schottky diode under different dissipated power of the transistor heat source. These methods are verified by measurements with micro thermistors. The results show that these methods have a potential for HEMT analysis in thermal management. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from temperature distribution in the structure with the support of 3-D device thermal simulation. The thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The analysis of thermal behavior can help during design and optimization of power HEMT.
关键词： thermal properties,Raman spectroscopy,thermal management,Schottky diode,power HEMT devices
更新于2025-09-23 15:21:21