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- 摘要
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- 实验方案
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Label-free detection of ambient refractive index based on plasmonic Bragg gratings embedded resonator cavity sensor
摘要： In this work, we incorporated Bragg gratings in the standard ring resonator design in order to enhance the sensitivity of the refractive index sensor. The transmission spectrum and electric field distribution of the device are simulated using the finite element method (FEM). The numerical simulation results obtained from the transmission spectrum are used to examine the sensing characteristics of the structure. The size of the grating teeth has a significant effect on the intensification of surface plasmons which in turns enhances the interaction between the ambient medium and the light. Bragg grating embedded resonator cavity design has the best sensitivity, FOM and Q-factor of 1680 nm/RIU, 48 and 48.4, respectively which is much higher than several previously reported values.
关键词： metal-insulator-metal waveguide,Plasmonics,Bragg grating,Refractive index sensor,finite element method
更新于2025-09-11 14:15:04
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Miniaturized Optoelectronic SPR Sensor Based on Integrated Planar Waveguide and MIM Hot-Electron Photodetector
摘要： There is an increasing interest in miniaturized surface plasmon resonance (SPR) sensors for portable biosensing. Toward this goal, removing the use of an external spectrometer is a fundamental step to miniaturize the Kretschmann SPR sensors. In this article, we have proposed a new architecture of the SPR sensor with an electrical response in which the integrated hot-electron photodetector replaces the traditional spectrometer. In this device, the metal–insulator–metal (MIM) junction and planar waveguide (PWG) are integrated together as a multilayer. The structure is excited by a broad-spectrum light-emitting diode (LED) in the near-IR region. The coupling between the surface plasmon polariton (SPP) mode of the MIM junction and the PWG mode leads to predominated photoabsorption in the top layer of the MIM junction within a selective narrowband of excitation bandwidth. The center wavelength of the absorption band is determined by the refractive index of the analyte. We demonstrate that based on the hot-electron injection in the MIM junction, the open-circuit voltage of the MIM junction in the proposed architecture is proportional to the refractive index of the analyte and this feature can replace the wavelength interrogation of the SPR sensors. We show that electrical sensitivity can be improved by introducing an indium tin oxide (ITO) layer as a hot-electron blocker above the bottom electrode of the MIM junction. The response of the proposed sensor is calculated in detail, and its optical sensitivity is estimated to be ～8000 nm/refractive index unit (RIU), which turns to an electrical sensitivity of 12.5 V/RIU in our device.
关键词： refractive index sensor,metal–insulator–metal (MIM) junction,surface plasmon resonance (SPR),Hot-electron
更新于2025-09-11 14:15:04
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The effects of rapid thermal annealing and microwave annealing on the electrical properties of ZrO2 metal-insulator-metal capacitors
摘要： The effects of different rapid thermal annealing (RTA) and microwave annealing (MWA) on the electrical behaviors of ZrO2 metal-insulator-metal (MIM) capacitors were studied in detail. The maximum capacitance density was achieved at 1400 W for MWA, i.e. ~29.29 fF/μm2 increased by ~40% compared with that of the un-annealed capacitors. For the capacitors under RTA at 370 oC, equivalent to the ambient of the MWA at 1400 W, the capacitance density is ~28.04 fF/μm2. Moreover, the leakage current density of ZrO2 MIM capacitors for MWA at 1400 W and RTA at 370 oC are determined to be about 3.55×10-7 A/cm2 and 1.88×10-6 A/cm2 at the applied voltage of -1.5 V, respectively. Finally, the possible mechanisms of the improved electrical properties of ZrO2 MIM capacitors through MWA were proposed.
关键词： ZrO2,Rapid thermal annealing,Metal-insulator-metal Capacitors,Microwave annealing
更新于2025-09-10 09:29:36
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Large Errors from Assuming Equivalent DC and High-Frequency Electrical Characteristics in Metal–Multiple-Insulator–Metal Diodes
摘要： Metal-insulator-metal (MIM) tunnel diodes are essential for ultra-high speed rectification. We review an erroneous method for distributing DC voltage drops across multiple insulator layers that is used in all the published literature on these devices. It has resulted in large errors between designed and fabricated multi-insulator diodes. For multi-insulator MIM diodes, voltage division is dependent on both tunneling resistances and oxide capacitances. We demonstrate that correct voltage division at DC is determined by the rectification resistance, as opposed to the commonly used capacitive voltage division. We find that DC characteristics of multi-insulator diodes cannot be used to predict high frequency behavior.
关键词： solar energy,infrared,optical rectenna,Metal/insulator/metal (MIM) diode,tunneling diodes
更新于2025-09-10 09:29:36
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Over 1000-fold enhancement of upconversion luminescence using water-dispersible metal-insulator-metal nanostructures
摘要： Rare-earth activated upconversion nanoparticles (UCNPs) are receiving renewed attention for use in bioimaging due to their exceptional photostability and low cytotoxicity. Often, these nanoparticles are attached to plasmonic nanostructures to enhance their photoluminescence (PL) emission. However, current wet-chemistry techniques suffer from large inhomogeneity and thus low enhancement is achieved. In this paper, we report lithographically fabricated metal-insulator-metal (MIM) nanostructures that show over 1000-fold enhancement of their PL. We demonstrate the potential for bioimaging applications by dispersing the MIMs into water and imaging bladder cancer cells with them. To our knowledge, our results represent one and two orders of magnitude improvement, respectively, over the best lithographically fabricated structures and colloidal systems in the literature. The large enhancement will allow for bioimaging and therapeutics using lower particle densities or lower excitation power densities, thus increasing the sensitivity and efficacy of such procedures while decreasing potential side effects.
关键词： upconversion nanoparticles,plasmonic enhancement,bioimaging,photoluminescence,metal-insulator-metal nanostructures
更新于2025-09-10 09:29:36
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Single electron transistors with e-beam evaporation of SiO <sub/>2</sub> tunnel barriers
摘要： Recent work on fabricating metal-insulator-metal (MIM) single electron transistors (SETs) using deposited dielectrics shows promise for becoming a manufacturable process due to compatibility with modern CMOS processes. This process, the “rib-SET” process [V. Joshi, A. O. Orlov, and G. L. Snider, J. Vac. Sci. Technol. B 26, 2587 (2008); G. Karbasian, A. O. Orlov, and G. L. Snider, J. Vac. Sci. Technol. B 33 (2015)], features a self-aligned island and should allow for scaling SETs below 10 nm. However, one of the biggest roadblocks in realizing a high-quality SET with this process has been dif?culties in developing high-quality, low-noise, MIM tunnel junctions. In this work, the authors report Pt-SiO2-Pt MIM SETs with tunnel barriers deposited by e-beam evaporation as an alternative to atomic layer deposition. There are some challenges in the formation of tunnel barriers via e-beam evaporation that are addressed. It is expected that platinum has a negligible native oxide; however, there is a substantial resistance in as-deposited Pt-SiO2-Pt structures that can be reduced by over 5 orders of magnitude by subjecting the ?nished devices to an anneal in a hydrogen plasma, suggesting the presence of an interfacial platinum oxide. It is shown that this treatment not only increases the conductance through the SET, but that it is necessary for forming high conductance tunnel barriers that are desired for making low-noise SETs.
关键词： single electron transistors,metal-insulator-metal,e-beam evaporation,SiO2 tunnel barriers,CMOS processes
更新于2025-09-09 09:28:46
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A brief overview of RF sputtering deposition of boron carbon nitride (BCN) thin films
摘要： A great part of interest has been paid for fabricating new materials with novel mechanical, optical, and electrical properties. Boron carbon nitride (BCN) ternary system was applied for variable bandgap semiconductors and systems with extreme hardness. The purpose of this literature review is to provide a brief historical overview of B4C and BN, to review recent research trends in the BCN synthesizes, and to summarize the fabrication of BCN thin films by plasma sputtering technique from B4C and BN targets in different gas atmospheres. Pre-set criteria are used to discuss the processing parameters affecting BCN performance which includes the gasses flow ratio and effect of temperature. Moreover, many characterization studies such as mechanical, etching, optical, photoluminescence, XPS, and corrosion studies of the RF sputtered BCN thin films are also covered. We further mentioned the application of BCN thin films to enhance the electrical properties of metal-insulator-metal (MIM) devices according to a previous report of Prakash et al. (Opt. Lett. 41, 4249, 2016).
关键词： Radio frequency sputtering,Gas flow ratio,Boron carbon nitride,Metal-insulator-metal device
更新于2025-09-04 15:30:14