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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
摘要： Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the e?ciency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best e?ciency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion e?ciency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx ?lm, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the bene?cial e?ects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a signi?cant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two di?erent points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
关键词： hole transport material,inverted planar perovskite solar cell,perovskite morphology,Co-doped NiOx,electrical conductivity
更新于2025-09-23 15:21:01
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Room-temperature Sputtered NiOx for hysteresis-free and stable inverted Cs-FA mixed-cation perovskite solar cells
摘要： In this research, a room-temperature sputtering technology for fabricating high performance NiOx film was developed, which was applicable for inverted cesium (Cs)-formamidinium (FA) mixed-cation perovskite solar cells (PSCs). The Ni3t/Ni2t ratio in sputtered NiOx film was effectively adjusted by controlling Ar pressure while sputtering. NiOx films with appropriate Ni3t/Ni2t ratio exhibit uniform surface morphology, high transmittance, and better energy level match with the perovskite layer. By using this sputtered NiOx film as hole transporting layer, short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE) of a champion inverted PSC were 19.25 mA/cm2, 1.05 V, 0.80 and 16.23%, respectively. Also, these devices remained 90.6% of their initial PCE after light soaking at a surrounding temperature of 50°C for more than 600 h.
关键词： Stability,Room-temperature,Magnetron sputtering,Cs-FA mixed-cation perovskite,NiOx HTL
更新于2025-09-23 15:19:57
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Ambient-Processed, Additive-Assisted CsPbBr3 Perovskite Light-Emitting Diodes with Colloidal NiOx Nanoparticles for Efficient Hole Transporting
摘要： In this study, the electrically driven perovskite light-emitting diodes (PeLEDs) were investigated by hybridizing the organic polyethylene oxide, 1,3,5-tris (N-phenylbenzimiazole-2-yl) benzene (TPBi), and bis(3,5-di?uoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) with CsPbBr3 in the emission layer and adopting the colloidal NiOx nanoparticle (NP) hole transport layer. The synthesized NiOx NPs, having an average size of ~5 nm, can be spin-coated to become a smooth and close-packed ?lm on the indium–tin–oxide anode. The NiOx NP layer possesses an overall transmittance of ~80% at 520 nm, which is about the peak position of electroluminescence (EL) spectra of CsPbBr3 emission layer. The coating procedures of NiOx NP and CsPbBr3 layers were carried out in ambient air. The novel PeLED turned on at 2.4 V and emitted bright EL of 4456 cd/m2 at 7 V, indicating the remarkable nonradiative-related defect elimination by organic additive addition and signi?cant charge balance achieved by the NiOx NP layer.
关键词： colloidal NiOx nanoparticles,organic additives,ambient-process,perovskite light-emitting diodes (PeLEDs),inorganic lead halide perovskites
更新于2025-09-23 15:19:57
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Optoelectronic Properties of Electron Beam-Deposited NiOx Thin Films for Solar Cell Application
摘要： The fabrication of highly efficient nickel oxide (NiOx) thin film for optoelectronic devices is a challenging task because optoelectronic properties are considerably influenced by deposition technique and film thickness. The effect of thickness on the film properties of electron beam–physical vapour-deposited NiOx thin film has been investigated in this work. The influence of post-annealing treatment on the optoelectronic properties of the film was compared with that of the as-deposited one. Optical transparency gradually decreased upon the successive increment in thickness of the as-deposited and annealed films. The surface roughness of as-deposited films increased linearly with the increase in film thickness, but this behaviour was altered in post-annealed films. Spherical grains with high packing density were observed on the as-deposited films, but the grain size was altered substantially on the post-annealed films. The annealed films presented a higher work function than their corresponding as-deposited films. This work presents important insights into the design of photovoltaic devices with an effective deposition process, including a high material utilisation.
关键词： thickness,work function,NiOx,electron beam vapour deposition,annealing,opto-electronic
更新于2025-09-23 15:19:57
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Modification of NiO <sub/>x</sub> hole transport layer for acceleration of charge extraction in inverted perovskite solar cells
摘要： The modification of the inorganic hole transport layer has been an efficient method for optimizing the performance of inverted perovskite solar cells. In this work, we propose a facile modification of a compact NiOx film with NiOx nanoparticles and explore the effects on the charge carrier dynamic behaviors and photovoltaic performance of inverted perovskite devices. The modification of the NiOx hole transport layer can not only enlarge the surface area and infiltration ability, but also adjust the valence band maximum to well match that of perovskite. The photoluminescence results confirm the acceleration of the charge separation and transport at the NiOx/perovskite interface. The corresponding device possesses better photovoltaic parameters than the device based on control NiOx films. Moreover, the charge carrier transport/recombination dynamics are further systematically investigated by the measurements of time-resolved photoluminescence, transient photovoltage and transient photocurrent. Consequently, the results demonstrate that proper modification of NiOx can significantly enlarge interface area and improve the hole extraction capacity, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.
关键词： charge extraction,hole transport layer,NiOx,perovskite solar cells,photovoltaic performance
更新于2025-09-23 15:19:57
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Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering
摘要： As the charge transport layer of quantum dot (QD) light-emitting diodes (QLEDs), metal oxides are expected to be more stable compared with organic materials. However, the efficiency of metal oxide-based all-inorganic QLEDs is still far behind that of organic–inorganic hybrid ones. The main reason is the strong interaction between metal oxide and QDs leading to the emission quenching of QDs. Here, we demonstrated nickel oxide (NiOx)-based all-inorganic QLEDs with a maximum current efficiency of 20.4 cd A?1 and external quantum efficiency (EQE) of 5.5%, which is among the most efficient all-inorganic QLEDs. The high efficiency is mainly attributed to the aluminum oxide (Al2O3) deposited at the NiOx/QDs interface to suppress the strong quenching effect of NiOx on the QD emission, together with the molybdenum oxide (MoOx) that reduced the leakage current and facilitated hole injection, more than 300% enhancement was achieved compared with the pristine NiOx-based QLEDs. Our study confirmed the effect of decorating the NiOx/QDs interface on the performance enhancement of the all-inorganic QLEDs.
关键词： all-inorganic,high efficiency,NiOx,light-emitting devices,quantum dots
更新于2025-09-23 15:19:57
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Rare earth ions doped NiO hole transport layer for efficient and stable inverted perovskite solar cells
摘要： Hole transport layer plays a critical role in achieving high performance and stable inverted perovskite solar cells (PSCs). Doping has been proved to be an effective strategy to modify the electrical and optical properties of semiconductor oxides. Herein, rare earths (REs: Ce, Nd, Eu, Tb, and Yb) elements are systemically doped into the NiOx hole transport layer (HTL) via a simple solution-based method. The results demonstrate that the REs doping could considerably modify the compactness, conductivity, and band alignment of the NiOx HTL, leading to the highly improved permanence of the inverted PSCs. The PSCs using 3% Eu:NiOx HTL yielded the optimum power conversion efficiency of 15.06%, relatively improved 23.4% compared with the PSC using pristine NiOx HTL (12.20%). It also demonstrated much better long time stability. The improved photovoltaic properties of the device can be attributed to the more efficient charge extraction and suppressed interfacial recombination rate by the introduction of appropriate REs in the NiOx HTL. This work indicates that RE doping is a very effective and promising strategy to achieve adjustable hole extraction material for high and stable inverted PSCs.
关键词： Rare earth ions,Perovskite solar cells,Doped NiOx film,Inverted planar structure
更新于2025-09-19 17:13:59
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Inverted Planar Perovskite Solar Cells Based on NiO <sub/>x</sub> Nano Film with Enhanced Efficiency and Stability
摘要： The organometal halide perovskite (OHP) materials have attracted much attention throughout the world due to their superb optoelectronic properties. Tremendous progress has been made in the OHP based solar cells with increased efficiency from 3.8% to 24.2% within the last decade, benefiting from efforts in the photovoltaic field. However, all the OHP solar cells with highest efficient are based on a normal mesoporous structure with TiO2 at the bottom, which needs high temperature process. The inverted planar structure OHP solar cells based on PEDOT:PSS suffer from low efficiency (lower than 15%) and inferior stability due to degradation of PEDOT:PSS in ambient air. Herein, we employed sol–gel method to fabricate a NiOx nano film as the hole transporting layer for inverted OHP solar cells. The device performance based on PEDOT:PSS and NiOx were systematically investigated. It was found that the perovskite films on NiOx film had larger grain size and thus lower defects’ density. The Capacitance–Voltage measurement indicated that the device based on NiOx exhibited larger built-in potential, which significantly enhanced the open-circuit potential of the OHP solar cells. Furthermore, the solar cell based on NiOx nano film exhibited excellent stability compared with the PEDOT:PSS based device, due to robust property of NiOx in ambient air.
关键词： Stability,Perovskite Solar Cell,Large Grain Size,NiOx Nano Film,High Efficiency
更新于2025-09-19 17:13:59
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Effects of interfacial energy level alignment on carrier dynamics and photovoltaic performance of inverted perovskite solar cells
摘要： Metal doping is an efficient method for optimizing NiOx as hole transport material in the inverted perovskite solar cells, which can contribute to the optimization of the interfacial energy level alignment, while the underlying influencing mechanism on the charge carrier dynamics and device performance needs to be further elucidated. In this work, NiOx films with modulated energy levels are obtained via Li doping and examined by ultraviolet photoelectron spectrometer. The effects of the energy level alignment of NiOx on the carrier transfer and recombination dynamics are elucidated by transient photovoltage/photocurrent and transient fluorescence dynamics. The Li doping can significantly shift the valence band of NiOx downward, and the 4% Li content endows NiOx with the optimal energy level matching with perovskite and the best charge separation/transfer ability, which can be confirmed through the photoluminescence results. The corresponding device possesses superior photovoltaic parameters with the champion power conversion efficiency of 17.34%, 37% higher than device based on pure NiOx. The results highlight that proper metal doping can optimize the energy level of the hole transport material to well match the perovskite, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.
关键词： Li-doped NiOx,Inverted perovskite solar cell,Charge transport/recombination dynamics,Energy level alignment
更新于2025-09-19 17:13:59
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Pb and Li co-doped NiOx for efficient inverted planar perovskite solar cells
摘要： Organic-inorganic halide perovskites solar cells have garnered increasing attention in recent years due to the dramatic rise in power conversion efficiencies (PCEs). In perovskite solar cells (PSCs), selecting appropriate hole transport materials to insert between perovskite layer and electrodes can improve Schottky contact, facilitate the hole transport, therefore reduce charge recombination, and therefore improve cell performance. Doping of metal cation is an effective means to regulate energy level structure and change its conductivity. In this study, we novelly introduce the Pb2+ doped NiOx as the hole transport materials to decrease the energy loss between NiOx and the perovskite layer, which improves open-circuit voltage (Voc) of the PSCs. In order to improve the conductivity of the NiOx film, the Li+ co-doping is introduced. We introduce Pb and Li co-doping strategy to match the work function of doped NiOx with perovskite valence band energy level, and increase the conductivity of NiOx for high-efficiency inverted planar PSCs. The Pb and Li co-doped NiOx devices exhibit efficient hole extraction and enhanced conductivity, which improve the performance of inverted planar PSCs to 17.02% compared with 15.40% of the undoped device.
关键词： Perovskite solar cells,Power conversion efficiency,Pb and Li co-doping,Hole transport layer,NiOx
更新于2025-09-12 10:27:22