研究目的
Investigating the effect of thickness and post-annealing treatment on the optoelectronic properties of electron beam–physical vapour-deposited NiOx thin films for solar cell applications.
研究成果
The study concludes that the optoelectronic properties of NiOx thin films are significantly influenced by film thickness and post-annealing treatment. Annealed films showed improved work function and electrical properties, making them suitable for use as hole transport materials in perovskite solar cells. However, further optimization is needed to enhance solar cell efficiency.
研究不足
The study is limited to the effects of thickness and annealing temperature on NiOx thin films. The performance of the films in actual solar cell devices may vary based on other factors such as interface defects and ohmic contact quality.
1：Experimental Design and Method Selection
The study involved the deposition of NiOx thin films using electron beam–physical vapour deposition (EB PVD) technique at room temperature. The films were deposited at different thicknesses (20, 40, 60, and 80 nm) and subsequently annealed in a vacuum at 500 °C for 30 min.
2：Sample Selection and Data Sources
NiOx target (99.99%) was used for deposition on soda-lime glass substrates. The substrates were cleaned in an ultrasonic bath with detergent, washed by deionized water, and sonicated in acetone for 10 min before deposition.
3：List of Experimental Equipment and Materials
Equipment used includes EB PVD system, muffle furnace for annealing, X-ray diffraction (XRD) analyser, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), optical spectrophotometer, Hall effect measurement tool, and solar simulator for photovoltaic performance measurement.
4：Experimental Procedures and Operational Workflow
The NiOx films were deposited at room temperature under a working pressure of 4.6 × 10?6 Torr. Post-deposition, films were annealed in a vacuum at 500 °C for 30 min. The structural, morphological, optical, and electrical properties of the films were characterized using XRD, AFM, FESEM, UV-vis spectroscopy, and Hall effect measurements.
5：Data Analysis Methods
XRD data were analysed to determine crystallite size, microstrain, and dislocation density. Optical properties were analysed using UV-vis spectroscopy to determine bandgap and Urbach energy. Electrical properties were analysed using Hall effect measurements.
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X-ray diffraction analyser
RINT-TTR III/N
Rigaku
Used to characterize the crystalline structure of NiOx layers.
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Atomic force microscopy
Nanosurf Easyscan 2 AFM
Nanosurf
Used to determine the surface roughness of deposited NiOx films.
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Field emission scanning electron microscopy
Hitachi SU6600
Hitachi
Used to analyse the surface morphologies of the films.
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Optical spectrophotometer
JASCO V-570
JASCO
Used to measure the optical transmittance (T%) of NiOx films.
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Keithley 2400 source meter
CEP-2000RP
Keithley
Used to measure photovoltaic parameters and performances of the fabricated PSCs.
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NiOx target
Kujondo Laboratories Co., Japan
Used as the source material for the deposition of NiOx thin films.
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Hall effect measurement tool
ECOPIA 3000
ECOPIA
Used to measure carrier mobility, density, and resistivity of the deposited NiOx films.
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EQE system
CEP2000RR
Bunkoukeiki Co.
Used to measure external quantum efficiency (EQE).
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