摘要： The modification of the inorganic hole transport layer has been an efficient method for optimizing the performance of inverted perovskite solar cells. In this work, we propose a facile modification of a compact NiOx film with NiOx nanoparticles and explore the effects on the charge carrier dynamic behaviors and photovoltaic performance of inverted perovskite devices. The modification of the NiOx hole transport layer can not only enlarge the surface area and infiltration ability, but also adjust the valence band maximum to well match that of perovskite. The photoluminescence results confirm the acceleration of the charge separation and transport at the NiOx/perovskite interface. The corresponding device possesses better photovoltaic parameters than the device based on control NiOx films. Moreover, the charge carrier transport/recombination dynamics are further systematically investigated by the measurements of time-resolved photoluminescence, transient photovoltage and transient photocurrent. Consequently, the results demonstrate that proper modification of NiOx can significantly enlarge interface area and improve the hole extraction capacity, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.