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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Broadband 1-dB Noise Figure GaAs Low-Noise Amplifier for Millimeter-Wave 5G Base-Stations
摘要： A broadband low-noise amplifier (LNA) with sub-1 dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in 0.1-μm InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a -1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.
关键词： millimeter-wave,noise figure,pHEMT,5G,low-noise amplifier,GaAs
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Kiev (2018.4.24-2018.4.26)] 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Amplified and Spontaneous Stokes Noise Features in a Singlemode Silica Fiber
摘要： the division technique of the total optical noise in (FRA) onto stimulated and spontaneous parts is presented in this work. The maximum power of the amplified spontaneous noise in silica single-mode fiber is experimentally studied as function of the pump power variation in the idle mode of counter-pumped FRA. It is shown that the real FRA noise figure may be considerably less than 3 dB at a pump power of several hundreds of mW.
关键词： Amplified spontaneous emission,Raman gain coefficient,Noise figure,Fiber Raman amplifier,Quantum limit
更新于2025-09-23 15:22:29
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[IEEE 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2018.6.29-2018.7.3)] 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - An Interface Model of the Interconnection Between Integrated Circuit Chip Die and Printed Circuit Board
摘要： This work represents results obtained during research of high frequency IC packaging. The interface between IC die and PCB is described and its inner structure is developed: contact pads on IC die, bondwires and chip outputs. As an example of method developed the interface effects into device development and characteristics are shown for the LNA module as a part of the GPS receiver test chip.
关键词： LNA,Low noise amplifier,GPS,CMOS,chip packaging,Noise Figure
更新于2025-09-19 17:15:36
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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 1.2-dB Noise Figure Broadband GaAs Low-Noise Amplifier with 17-dB Gain for Millimeter-Wave 5G Base-Station
摘要： A 24-30GHz low-noise amplifier (LNA) with 1.2-dB noise figure (NF) is designed for millimeter-wave 5G stations. The LNA has 2 stages, 1st stage utilizes source degeneration inductor for simultaneous noise and input match. 2nd stage uses the same structure for staging match and the trade-off between gain and noise optimization. A structure of parallel resistor and capacitor is utilized for bandwidth and stability. Simulation result shows that the LNA achieves peak gain of 17.8-dB, and the 1-dB bandwidth is over 6-GHz. NF is below 1.35-dB in the bandwidth.
关键词： low-noise amplifier,pHEMT,millimeter-wave,5G,GaAs,noise figure
更新于2025-09-19 17:15:36
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Modeling degraded performance metrics of optical amplifiers under radiation
摘要： Gain, noise figure (NF), and output power are considered the common performance metrics of an optical fiber amplifier. With an increasing interest of space industry in developing technologies for satellite-ground and intersatellite communication in the optical band, the EDFA (erbium doped fiber amplifier) is needed as power amplifier in space to compensate attenuation and insertion losses between the building blocks of the architecture. There is very little research on modeling the degradation mechanisms of typical commercial fibers, specifically on the NF and output power metrics, that requires knownledge of the insertion losses at the entrance of the fiber for both the pump and the signal wavelengths λp and λs. In this brief report we propose that the noise figure and output power trends can be extrapolated from a semi-empirical model for the insertion losses proved at high and low dose rates at two different temperatures. The results show reasonable trends that a common off-the shelf EDFA can present in co-propagating configuration on the NF and output power under several doses at low and high rates. The radiation losses using non-hardened fiber show sustainable attenuation levels in dB that can possibly allow employing this off-the shelf fibers in CubeSats or small satellites without the need of special radiation insulation. It is further supported with theoretical data that the temperature factor can affect more the EDFA degradation in space than the radiation itself, imposing limits on the temperature control of commercial satellites using this photonics.
关键词： Noise,Figure,Gain,Radiation,Power,EDFA
更新于2025-09-19 17:15:36
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Regional-Centralized Content Dissemination for eV2X services in 5G mmWave-enabled IoVs
摘要： In this paper, we exploit an idea of coupling multiple oscillators to reduce phase noise (PN) to beyond the limit of what has been practically achievable so far in a bulk CMOS technology. We then apply it to demonstrate for the first time an RF oscillator that meets the most stringent PN requirements of cellular basestation receivers while abiding by the process technology reliability rules. The oscillator is realized in digital 65-nm CMOS as a dual-core LC-tank oscillator based on a high-swing class-C topology. It is tunable within 4.07–4.91 GHz, while drawing 39–59 mA from a 2.15 V power supply. The measured PN is ?146.7 dBc/Hz and ?163.1 dBc/Hz at 3 MHz and 20 MHz offset, respectively, from a 4.07 GHz carrier, which makes it the lowest reported normalized PN of an integrated CMOS oscillator. Straightforward expressions for PN and interconnect resistance between the cores are derived and verified against circuit simulations and measurements. Analysis and simulations show that the interconnect resistance is not critical even with a 1% mismatch between the cores. This approach can be extended to a higher number of cores and achieve an arbitrary reduction in PN at the cost of the power and area.
关键词： LC-tank,Basestation (BTS),phase noise,figure of merit (FoM),class-C oscillator,coupled oscillators
更新于2025-09-19 17:13:59
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Analysis on Gain And Noise Figure of Direct Modulation RoF Link
摘要： The equivalent circuit model of direct modulation RoF link is introduced. Based on this model, the mathematical expressions of link gain and noise figure are both derived. The factors affecting the transmission characteristics, especially the parasitic parameters of lasers and detectors, are further analyzed. Finally, a general method to improve link gain and reduce noise figure is given.
关键词： gain,direct modulation,RoF,noise figure
更新于2025-09-16 10:30:52
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Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications
摘要： This contribution deals with the microwave linear characterization and noise figure measurement of four on-wafer GaAs pseudomorphic high-electron mobility transistors having scaled gate widths. The proposed measurement campaign has been fulfilled in two different laboratories: The University of Messina, Italy and US Naval Research Laboratory, Washington, DC, USA. Two equivalent approaches have been straightforwardly employed: a standard tuner-based technique and a novel tuner-less technique. The effectiveness of the novel technique has been confirmed as carried out independently by the two laboratories, evidencing the benefits of both techniques. The proposed experimental activity highlights the applicability of the tunerless technique for the noise characterization of advanced on-wafer devices without the constraint imposed by the addition of a source tuner to the standard measurement setup.
关键词： on-wafer GaAs pHEMT,noise figure,microwave,low-noise characterization
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Low Noise Optical Buffering Based on Non-Degenerate Phase Sensitive Parametric Amplification
摘要： Optical buffers are devices which can store optical signals for a period of time and could be valuable tools for applications such as optical storage, optical packet switching and all-optical signal processing providing the storage functionality in the optical domain, thus avoiding unwanted opto-electronic and eletro-optical conversions. During the last twenty years, there have been proposed many approaches for the implementation of optical buffers. The most straightforward scheme is the use of a fiber spool playing the role of a long-time optical delay line which requires either direct or indirect amplitude modulation to maintain the bit timing [1]. Other interesting techniques referring to optical buffering are slow-light [2], temporal solitons in optical cavities [3], excitability properties of optical devices [4] and photonic crystal nanocavities [5]. In this paper, a buffer relying on long-time optical delays supported by phase-sensitive amplification (PSA) is theoretically and numerically analysed. The scheme is compared against a buffer employing phase insensitive amplification (PIA). The buffer is studied for different levels of internal losses and in two configurations: the first considers that the PSA gain element precedes the source of losses whilst the second topology considers the opposite. Results derived from numerical simulations based on Nonlinear Schrodinger Equation (NLSE) solved with the use of split-step Fourier method taking into account polarization mode dispersion and quantum noise are also presented. The results show that the PSA enabled buffer is more robust to the accumulated noise attributed to multiple circulations in the optical cavity and can preserve the signal fidelity for hundreds of circulations, thus emerging as a promising long run buffering solution, being modulation format transparent and with the potential of multi-wavelength buffering as it will be shown in the context of the paper.
关键词： all-optical signal processing,noise figure,phase-sensitive amplification,optical storage,optical buffering
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Al <sub/>x</sub> In <sub/>1-x</sub> As <sub/>y</sub> Sb <sub/>1-y</sub> Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for 2-μm Detection
摘要： We report separate absorption, charge, and multiplication (SACM) avalanche photodiodes (APDs) in the AlxIn1-xAsySb1-y material system for 2-μm detection. Gain, dark current, and low excess noise are demonstrated.
关键词： noise figure,optoelectronic devices,photodetectors,Avalanche photodiodes,dark current
更新于2025-09-11 14:15:04