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Green Synthesis and Electrical Properties of p-CuO/n-ZnO Heterojunction Diodes
摘要： Green production of nanomaterials and their materials properties studies are majorly important for the futuristic development of nanodevices. We had green synthesized the ZnO and CuO nanoparticles using the extract of “Eucalyptus globulus” leaves. The obtained ZnO and CuO nanoparticles were studied for their structural, morphological and optical properties. The green synthesized CuO and ZnO nanoparticles have showed the crystalline size of about 12.29 and 10.16 nm. The transmission electron microscopic images of green synthesized ZnO and CuO nanoparticles revealed the morphological information and their respective average sizes of 46 and 32 nm. Optical absorbance spectrum revealed the existence of morphology based quantum confinement in the green ZnO and CuO nanoparticles. Further we have fabricated the p-CuO/n-ZnO heterojunction device using the green synthesized nanoparticles and also evaluated the electrical properties of the p–n junction diode. Under the light illumination the photodiode characteristic were studied for the obtained p–n junction diode. Finally, the energy band diagram of the photodiode responsible for the electronic transport had also discussed.
关键词： Electrical properties,p–n Heterojunction,Green synthesis,Photodiode
更新于2025-09-23 15:21:21
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[IEEE 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - Sarajevo, Bosnia and Herzegovina (2019.9.2-2019.9.4)] 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - An Affordable Laboratory Photodiode up to 11.5 GHz for Microwave Photonics Experiments
摘要： Low-cost optoelectronic devices are the main limiting factor when it comes to scaling the current access networks based on microwave photonics to the capabilities of smart cities. The use of affordable photodiodes could decrease the use of microwave photonics, since it is part of each system. In this paper we evaluate the frequency response of a coaxial packaged photodiode. The design of an electric circuit is presented. The results from the vector network analyzer show that the coaxial packaged photodiode makes photodetectors applicable up to 11.5 GHz. In addition, an experimental verification of the photodiode in an optoelectronic oscillator is performed.
关键词： photodetector,optoelectronic oscillator,photodiode,microwave photonics
更新于2025-09-23 15:21:01
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Reference Module in Chemistry, Molecular Sciences and Chemical Engineering || SPECTROPHOTOMETRY/Diode Array ☆
摘要： Diode array spectrometry represents a particular approach for characterizing the result of the interaction between electromagnetic radiation and the sample, based on simultaneous measurement of light intensity over small spectral intervals having equal width. This is achieved through the following sequential stages, as schematically shown in Figs. 1 and 2D: a. interaction between the polychromatic beam and the sample; b. spatial dispersion of the transmitted (eventually reflected or emitted) radiation according to wavelength on multiple channels of equal widths, by means of a fixed optical element; c. imaging the dispersed radiation in a focal plane; and d. (quasi)simultaneous sampling of the dispersed radiation interval using photosensitive detectors, precisely positioned in the focal plane.
关键词： photodiode principle,Diode array spectrometry,concave diffraction gratings,spectrophotometry,instrumentation
更新于2025-09-23 15:21:01
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Fabrication of bifacial sandwiched heterojunction photoconductor a?? Type and MAI passivated photodiode a?? Type perovskite photodetectors
摘要： In this work, we report novel heterojunctions perovskite photodetector architecture utilizing metal-free contact electrodes. The metal-free contact electrodes were exploited to fabricate photoconductor – type perovskite photodetector. The attempt to investigate the effect of passivating the active layers of the as – proposed architecture with electrolytic MAI gave rise to a photodiode – type perovskite photodetector. These two photodetector types are sensitive and responsive to light sources through their dual transparent electrodes faces (N-face and T-face). We also showed that passivating the surfaces of the sandwiched perovskite layers with MAI solution improves the performance of the fabricated photodetectors, where the detectivity is enhanced by a factor of hundred compared to non-passivated devices. The proposed photodetectors architectures demonstrate champion dual-detectivity (1.77×1014 Jones for N-face and 4.64 × 1014 Jones for T-face), dual-responsivity (1.94 × 103 A/W for N-face and 1.61 × 103 A/W for T-face) and high dual – sensitivity (3.3 × 102 for N-face and 1.1 × 102 for T-face). All these properties were obtained from the two faces of the MAI passivated photodetectors under 0.02 mW/cm2 red LED illumination and at -2.0 bias voltage. This novel architecture may scale up towards building energy and cost efficient classes of optoelectronic and photovoltaic devices which are responsive to light in two directions.
关键词： MAI Passivation,Bifacial,Photoconductor,Perovskites,Photodetectors,Photodiode
更新于2025-09-23 15:21:01
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.
关键词： Gate Overlap,Radiation Effects,Drain,CMOS Image sensors,Partially Pinned Photodiode,Dark Current,TID,Threshold shift,RHBD
更新于2025-09-23 15:21:01
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Impacts of Wind Speed and Humidity on the Performance of Photovoltaic Module
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),excess noise factor,near-infrared detection,impact ionization
更新于2025-09-23 15:19:57
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One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector
摘要： A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in-situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8–12 nm deposited thickness range.
关键词： H2S gas,two-dimensional layered MoS2,reactive sputtering,heterojunction photodiode
更新于2025-09-23 15:19:57
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Accurate Fiber Alignment using Silicon Photodiode on Grating Coupler for Wafer-Level Testing
摘要： A new fiber alignment method for wafer-level testing of silicon photonics devices achieves a high signal-to-noise (S/N) ratio. Using the response from a Si photodiode fabricated directly on a grating coupler and operating it in the avalanche region, we achieved over 4-dB improvement in the S/N ratio for fiber alignment.
关键词： Photonic integrated circuits,Fiber characterization and measurement techniques,Photodiode
更新于2025-09-23 15:19:57
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Evaluation of Chirped Fiber Bragg Grating with APD on Designed Optical Fiber Communication Link
摘要： Application of fiber Bragg grating (FBG) in optical communication is an evolving field. In this research paper, various types of chirped FBG’s (CFBG) have been used with avalanche photodiode (APD) on the designed optical fiber communication (OFC) link. Data rate of 20 Gbps and return-to-zero modulation format has been kept as fixed parameters. The designed link has been evaluated for varying fiber lengths (100, 200, 300, 400 and 500 km), various type of CFBG’s (linear, quadratic, square root and cubic root) with Gaussian apodization function, varying grating lengths (10, 20, 30, 40 and 50 mm) and operating temperatures (5°C, 10°C, 15°C, 20°C, 25°C, 30°C). The designed OFC link has also been evaluated for APD with and without CFBG. The performance evaluation matrix parameters selected are Q-factor, bit error rate and eye diagram. The OFC link employing CFBG with APD has been found to be superior. In compensating chromatic dispersion, optimum results have been observed for linear CFBG with Gaussian apodization function in comparison to other types of CFBG with 50 mm grating length for the maximum transmission distance.
关键词： bit error rate (BER),Optical fiber communication (OFC),eye diagram,chirped fiber Bragg grating (CFBG),vertical cavity surface emitting laser (VCSEL),avalanche photodiode (APD),Q-factor
更新于2025-09-23 15:19:57
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High responsivity ZnO based p-n homojunction UV-photodetector with series Schottky Barrier
摘要： In the present article, we proposed a p-n homojunction photodetector with a series Schottky barrier and a high value of responsivity in the ultraviolet region. The thin-film photodetector makes use of a junction between an RF-sputtered n-type ZnO nanostructure and a p-type CZO thin film derived through the spin coating process on an ITO coated glass substrate. Palladium metal contacts have been deposited to form the Schottky barrier in series with p-n homojunction. The device has been simulated, fabricated, and tested only after ensuring the stability of the p-type CZO thin film. The measured I-V characteristics of fabricated photodetector under illuminated and dark conditions showed excellent UV response and good rectification property. The device exhibits a peak responsivity of 13.2 A/W for a reverse biasing voltage of 3 V. This value is much above the values reported by others for ZnO based photodetector.
关键词： CZO,photodiode,U-V illumination,ZnO,Schottky junction
更新于2025-09-23 15:19:57