研究目的
To develop an accurate and easy fiber alignment method for wafer-level testing of silicon photonics devices that achieves a high signal-to-noise (S/N) ratio.
研究成果
The study successfully improved the S/N ratio for fiber alignment using a Si PD fabricated on a GC, with avalanche multiplication factors enhancing photocurrents. This method enables the use of an eye-safe laser light source in wafer-level testing environments, achieving a 4.3 dB larger S/N ratio than conventional Si PDs.
研究不足
The need to reduce optical power to comply with class-1 laser safety standards, which may degrade the S/N ratio. The study also identifies the dependency of avalanche multiplication characteristics on the junction size and the number of arrayed junctions.
1：Experimental Design and Method Selection:
The study employs a silicon photodiode (Si PD) fabricated directly on a grating coupler (GC) for fiber alignment, utilizing visible light (λ = 633 nm) absorbed in Si. The method improves alignment by being unaffected by fiber angle and polarization and insensitive to scattering noise.
2：Sample Selection and Data Sources:
Five different types of Si PDs with varying numbers and sizes of comb teeth (Type A-E) were fabricated to optimize the structure for fiber alignment.
3：List of Experimental Equipment and Materials:
The setup includes a Si PD on a GC, an optical circulator, and an optical power meter for measuring output power (Pout).
4：Experimental Procedures and Operational Workflow:
The method involves rough alignment by scanning the SMF position to maximize photocurrent (IPD), followed by fine optimization of angle and polarization by monitoring Pout.
5：Data Analysis Methods:
The S/N ratio was calculated as a function of bias voltage, with improvements noted when operating the Si PD in the avalanche region.
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