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Resistive Switching in Sub-micrometric ZnO polycristalline Films
摘要： Resistive switching devices are considered as the most promising alternative to conventional random access memories. They interestingly offer effective properties in terms of device scalability, low power-consumption, high read/write operation time, endurance and state retention. Moreover, neuromorphic circuits and synapse-like devices are envisaged with resistive switching modeled as memristors, opening the route toward beyond-Von Neumann computing architectures and intelligent systems. This work investigates how the resistive switching properties of zinc oxide thin films are related to both sputtering deposition process and device configuration, i.e. valence change memory (VCM) and electrochemical metallization memory (ECM). Different devices, with an oxide thickness ranging from 50 to 250 nm, are fabricated and deeply characterized. The electrical characterization evidences that, differently from typical nanoscale amorphous oxides employed for resistive RAMs (HfOx, WOx, etc..), sub-micrometric thicknesses of polycristalline ZnO layers with ECM configuration are needed to achieve the most reliable devices. The obtained results are deeply discussed, correlating the resistive switching mechanism to material nanostructure.
关键词： resistive switching,ZnO,nanostructure,memristors
更新于2025-09-10 09:29:36
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Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode
摘要： The resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS2) thin film has been investigated in Cu/MoS2/W2N stack configuration for Resistive Random Access Memory (ReRAM) application. The benefits of incorporating tungsten nitride (W2N) as a bottom electrode material were demonstrate by stability in operating voltages, good endurance (103 cycles) and long non-volatile retention (103 s) characteristics. Resistive switching properties in Cu/MoS2/W2N structure are induced by the formation/disruption of Cu conducting filaments in MoS2 thin film. Ohmic law and space charge limited current (SCLC) are observed as dominant conduction mechanism in low resistance state (LRS) and high resistance state (HRS) respectively. This study suggests the application of MoS2 thin films with W2N bottom electrode for next generation non-volatile ReRAM application.
关键词： Conducting filament,Resistive switching,Molybdenum disulphide,Thin films,Tungsten nitride
更新于2025-09-10 09:29:36
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Investigation of the Eightwise Switching Mechanism and Its Suppression in SrTiO <sub/>3</sub> Modulated by Humidity and Interchanged Top and Bottom Platinum and LaNiO <sub/>3</sub> Electrode Contacts
摘要： Memristive devices are hardware components for applications in neuromorphic computing, memories, and logic computation. This work contributes to the ongoing debate on the switching mechanism of eightwise polarity in SrTiO3-based resistive switches. Specifically the effect of atmospheric humidity on the materials defect chemistry and switching properties is considered. Asymmetric devices are designed by exchanging the top and bottom positions of Pt and LaNiO3 electrodes allowing for a separate analysis of the top and the bottom metal-oxide interfaces. Under dry atmospheres the switching hysteresis is enhanced with a top Pt contact and suppressed with a bottom Pt contact. It is argued that the buried position and dense microstructure of the bottom platinum impedes an oxygen vacancy driven switching mechanism. Under humid atmospheres eightwise switching occurs in both devices suggesting the presence of two switching mechanisms within the same eightwise switching polarity, namely, oxygen vacancy and hydroxide ion enabled switching. The findings help develop strategies to suppress eightwise switching by burying the active metal-oxide interface and ensuring dense electrode microstructures. Suppression of switching mechanisms relying on exchange with the environment is desirable for technological implementation of resistive switches and for strategies in stacking of memristive devices for memory and for neuromorphic hardware.
关键词： strontium titanate,humidity,resistive switching,eightwise polarity
更新于2025-09-10 09:29:36
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Control of Resistive Switching Voltage by Nanoparticle-Decorated Wrinkle Interface
摘要： Control of resistive switching voltage in nonvolatile memory devices plays a critical role in building commercial ultra-low power data storage technology. Here, an effective strategy to control the resistive switching voltage in polymer memory devices by interfacial engineering is presented. By creating a wrinkled surface in reduced graphene oxide (rGO) film as the conductive electrode, an electrical bistable phenomenon is observed in polymer diode with this rGO electrode, with the feature of a write-once-read-many-times nonvolatile memory effect. By further employing silver nanoparticles and controlling their density at the wrinkled rGO electrode/polymer interface, the optimized device exhibits a high performance nonvolatile memory effect with an ultra-low switching voltage of 0.9 V, high ON/OFF ratio of 1000, and desirable long retention time over 104 s. To the best knowledge, the value of switching voltage is much lower than that of previous related polymer memory devices. This study paves a new way toward ultra-low power manufacturing of non-volatile polymer memory devices.
关键词： interfacial engineering,resistive switching voltage,wrinkle surfaces,nanoparticle decoration,polymer memory devices
更新于2025-09-10 09:29:36
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Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI <sub/>3</sub> , Orthorhombic RbPbI <sub/>3</sub> , and Their Mixtures
摘要： Recently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next-generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP-based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI3) and nonswitchable rubidium lead iodide (RbPbI3) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/methylammonium iodide (MAI), five compositions of the mixture of RbPbI3 and MAPbI3 (Rb1?xMAxPbI3, x = 0, 0.31, 0.52, 0.71, and 1) films are fabricated. The mixtures of cubic MAPbI3 and orthorhombic RbPbI3 films exhibit excellent performances in Ag/polymethyl methacrylate/Rb1?xMAxPbI3/Pt cells, with endurance of 103 cycles, a high on/off ratio of 106, and an operation speed of 640 μs. Plausible explanations for the switching mechanism are provided based on Ag bridges by using the combination of conductive atomic force microscopy and energy dispersive X-ray spectroscopy. It is suggested nonswitchable RbPbI3 contributes to the endurance enhancement by restraining the growth of Ag bridges. The unique approaches provide a new strategy to overcome the bottleneck of the HP-based RS memories for next-generation computing.
关键词： halide perovskites,rubidium,conducting bridges,endurance,resistive switching
更新于2025-09-10 09:29:36
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Resistive switching effect enhanced by light irradiation in C/BaTiO <sub/>3</sub> /C memory structure
摘要： The Ta/[C/BaTiO3/C]/Si device was obtained. The resistive switching (RS) behaviors of the Ta/[C/BaTiO3/C]/Si device are studied in the dark and under white-light illumination with various power densities. The results show that the device displays bipolar RS effect, which can be modulated by the white light. And the RS memory device shows biggish resistance ratio, which is more than 105 under white-light irradiation with a power density of 40 mW/cm2, and the ratio can stabilize at nearly 71 cycles. This work is helpful for the optical control non-volatile memory.
关键词： C/BaTiO3/C,memory device,Resistive switching,white light
更新于2025-09-10 09:29:36
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Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices
摘要： In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field.
关键词： interconversion,complementary resistive switching (CRS),conductive filament,GeTeOx,Bipolar resistive switching (BRS)
更新于2025-09-09 09:28:46
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Investigating the Electronic Properties of Oxygen Vacancies in Anatase TiO2: An Ab Initio Study
摘要： Metal oxide dielectrics are known as promising candidates for resistive switching or memristor applications. TiO2 has been shown to be one of the favorites for the implementation of resistive switching devices. The mobile oxygen vacancies in TiO2 are recognized as the main source of resistive switching behavior. Therefore, the investigation of atomic scale properties of oxygen vacancies is of crucial importance for the description of microscopic phenomena leading to the resistive switching behavior. In the present work we employed standard DFT within the GGA approximation as well as GGA+U correction to investigate the electronic properties of oxygen vacancies in anatase phase of TiO2. We show that the Hubbard- like term (U) is essential for the correct description of the electronic properties. The defect formation energies at different charged states and the charge transition levels are calculated for different values of U-term. It has been shown that a value of U=3.5 eV is the best choice to obtain reasonable results for the band gap as well as the position of induced defect levels, at same time. Moreover, we show that the q=+2 charged state is the energetically most favorable state for the oxygen vacancy in TiO2.
关键词： metal oxides,DFT,resistive switching,charge transition levels,oxygen vacancy,Hubbard-like term,anatase TiO2
更新于2025-09-09 09:28:46
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Properties of percolation channels in planar memristive structures based on epitaxial films of a YBa <sub/>2</sub> Cu <sub/>3</sub> O <sub/> 7? <i>δ</i> </sub> high temperature superconductor
摘要： The transport properties of the percolation channels of memristive structures based on YBa2Cu3O7?δ epitaxial ?lms were studied. Molecular electronics and Andreev re?ection spectroscopy were utilised, and the in?uence of the superconductive transition of electrodes on resistive switching effects in these structures was examined. Based on the analysis of the conductivity mechanisms in the obtained heterostructures, it is assumed that percolation channels form through a chain of domains disordered by oxygen about 10 nm in diameter, with a maximum Tc of 60 K. Zero-bias anomalies of the dynamic resistance of the studied structures display temperature dependence of the critical current of typical superconductor—normal—superconductor weak links within the framework of Kulik–Omel’yanchuk theory in the dirty limit. A simulation was used to determine the physical parameters of the studied heterostructures.
关键词： resistive switching memory,heterostructures,?lms,critical current,high temperature superconductors,oxygen vacancies
更新于2025-09-09 09:28:46
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Simulation of Cycle-to-Cycle Instabilities in SiOx- Based ReRAM Devices Using a Self-Correlated Process with Long-Term Variation
摘要： Cycle-to-cycle (C2C) current variability occurring in ReRAM devices is not only a stochastic feature inherent to electron transport in low dimensional conducting structures but also a consequence of the measurement protocol used to characterize the device evolution during resistance switching. In such latest case, C2C changes depend on the particular arrangement of the ions or vacancies that form the conducting filament spanning the dielectric film. In this work a discrete first order autoregressive model AR(1) with long-term variation is used to represent both the random and the “deterministic” behaviors of the high resistance state current. Simulation of C2C instabilities in SiOx is carried out through the quantum point-contact model for filamentary electron transport in dielectrics with fluctuating confinement potential barrier height. Simplicity is of utmost importance since the proposed approach is aimed for circuit simulation environments in which complex and time-consuming computations need to be avoided.
关键词： MIM,Resistive Switching,SiOx,Variability
更新于2025-09-09 09:28:46