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Multilevel resistance switching behavior in PbTiO3/Nb:SrTiO3(100) heterostructure films grown by hydrothermal epitaxy
摘要： Epitaxial PbTiO3 films with a smooth and dense surface were fabricated by a promising hydrothermal synthesis on an Nb:SrTiO3(100) substrate. The resulting coated substrate was used to fabricate a Pt/PbTiO3/Nb:SrTiO3 heterostructure device. The device exhibited a multilevel storage capacity with an appropriate ROFF/RON ratio and excellent endurance and retention. An electric conduction analysis indicated that the resistive switching behavior of the device was attributed to the trap controlled space-charge-limited current conduction that was caused by the oxygen vacancies in the PbTiO3 hydrothermal films. The modulation of the Pt/PbTiO3 Schottky-like junction depletion under an applied electric field is thought to be responsible for the resistive switching behavior of the device in the carrier injection-trapped/detrapped process.
关键词： Hydrothermal epitaxy,Multilevel resistive switching behavior,PbTiO3 films
更新于2025-09-09 09:28:46
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Organic and hybrid resistive switching materials and devices
摘要： The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.
关键词： flexible electronics,organic materials,resistive switching memories,nonvolatile storage,hybrid materials
更新于2025-09-09 09:28:46
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Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications
摘要： In this study, efforts were devoted to unveiling the dual role of single crystalline Cu (5%) doped ZnO (Cu:ZnO) synthesized by a simple and low-cost chemical process and to investigate its efficacy on resistive switching (RS) applications. It was found that when Cu:ZnO was annealed at a lower temperature of 450 °C and integrated onto ITO/glass for RS applications, only oxygen mediated vacancies were responsible for its resistive switching. However, ferroelectric properties have been observed when the same Cu:ZnO was annealed at a higher temperature of 800 °C and integrated onto Nb doped SrTiO3. X-ray diffraction, high resolution transmission electron microscope, x-ray photoelectron spectroscopy, UV-VIS-near infrared spectrometer, and piezoelectric force microscopy (PFM) were employed to study the crystallinity, interfaces, chemical compositions, bandgap, and domains in Cu:ZnO thin films, respectively. The bandgap of Cu:ZnO was found to be 3.20 eV. PFM study exhibits the domain inversion with 180° polarization inversion by applying an external bias, evidencing its effectiveness for memory applications. When the electrical characteristics were concerned, the RS device based on this ferroelectric Cu:ZnO offers better performance, such as lower SET/RESET voltages (～1.40 V), higher retention (up to 106 s) without distortion, and higher ON/OFF ratio (2.20 × 103), as compared to the former lower temperature annealed Cu:ZnO devices. A band-diagram was proposed, and transport studies were developed to understand the operational mechanism of these devices. This study explains both the limits and scopes of Cu:ZnO RS devices and formulates an idea which may accelerate the design of future generation devices.
关键词： copper doped zinc oxide,memory applications,band-diagram,resistive switching,ferroelectric properties
更新于2025-09-09 09:28:46
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Thickness-Dependent Resistive Switching Behavior of KCu <sub/>7</sub> S <sub/>4</sub> /Cu <sub/><i>x</i> </sub> O/Au Device
摘要： We report the fabrication of KCu7S4/CuxO/Au devices with interfacial CuxO layers of different thicknesses through the spontaneous oxidation of Cu film during deposition. Deposition was conducted with an electron-beam evaporation system under the deposition rate and the chamber pressure of 0.1 ? s?1 and 9.8 × 10?3 Pa, respectively. X-ray diffraction and X-ray photoelectron spectroscopy characterizations reveal that the interfacial CuxO layers mostly comprise Cu2O and CuO. Electrical characterization reveals that the devices exhibit remarkably thickness-dependent resistive switching behavior. After undergoing an electroforming process under a high compliant current of 1000 μA, the KCu7S4/16 nm CuxO/Au device exhibits stable bipolar resistive switching behavior with the set voltage of 0.58 V and reset voltage of ?0.21 V, whereas the KCu7S4/32 nm CuxO/Au device only shows a hysteresis loop in the forward voltage regime. These findings are ascribed to the existence of high-insulation CuO, which is difficult to be softly broken down. Therefore, the depositional condition of Cu film and the thickness of the interfacial layer should be appropriately controlled for the effective performance of devices with Cu electrodes. The results may also provide guidance for the improvement of the performance and stability of Cu-based nonvolatile memory devices.
关键词： Electroforming Process,Resistive Switching Behavior,Interfacial Oxide Layer
更新于2025-09-04 15:30:14
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Effect of strain on the modifications in electronic structure and resistive switching in Ca-doped BiFeO <sub/>3</sub> films
摘要： Strain-induced modifications in the structure, electronic structure, electrical, and ferroelectric properties of the Bi0.90Ca0.10FeO3 (BCFO)/Nb-doped SrTiO3 (100) films have been systematically studied in light of variation in film thickness. X-ray diffraction and ?-scan measurements confirm the single phase, (100) oriented epitaxial growth of all films. Room temperature absorption spectra show the presence of asymmetric broad peak around ～2.5 eV, which is indicative of the presence of defect states inside the bandgap and is attributed to the oxygen vacancies. Improvement in the bipolar resistive switching behavior with a decrement in oxygen vacancies and improvement in ferroelectric properties with increasing film thickness suggest the crucial role of oxygen vacancies and strain in modifying the electrical properties of the BCFO films. Improvement in the ferroelectric behavior is attributed to the increment in the Fe 3d-O 2p hybridization, localization of Fe 3deg/Bi 6s-O 2p orbitals, and reduction in the oxygen vacancies with an increase in the film thickness. Observed stable retention and large ON/OFF switching ratio in BCFO films make them a promising candidate for application in the non-volatile memory device.
关键词： Ca-doped BiFeO3 films,resistive switching,ferroelectric properties,strain,electronic structure
更新于2025-09-04 15:30:14
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Reference Module in Materials Science and Materials Engineering || Film Deposition Processes Based on Eco-Friendly, Flexible, and Transparent Materials for High-Performance Resistive Switching
摘要： In 1971, the term memristor, the fourth fundamental element besides resistor, capacitor, and inductor was coined by Dr. Leon Chua. However, it was only in 2008 that Stanley Williams of Hewlett-Packard (HP) realized its existence for a device using TiO2 as the switching material and platinum (Pt) as electrodes. A two-terminal metal-insulator-metal (MIM) device has the ability of reversible resistive switching (RS) between low-resistance state (LRS) and high-resistance state (HRS) when an excitation voltage or current is applied. SET is de?ned to be a transition from HRS to LRS and corresponding voltage as Vset. On the other hand, RESET is de?ned as the transition from LRS to HRS and corresponding voltage as Vreset. Resistances in LRS and HRS are represented as RLRS and RHRS, respectively.
关键词： Transparent Electronics,Memristor,Eco-Friendly Materials,Film Deposition,Resistive Switching,Flexible Electronics
更新于2025-09-04 15:30:14
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Three-Terminal Memtransistors Based on Two-Dimensional Layered Gallium Selenide Nanosheets for Potential Low-Power Electronics Applications
摘要： A multi-terminal hybrid system named memtransistor has recently been proposed by combining the concepts of both memristor and field effect transistor (FET) with two-dimensional (2D) layered materials as the active semiconductor layer. In the memtransistors, the gate voltages are capable of modulating not only the transport properties of the fabricated FET, but also the resistive switching (RS) behaviors of the memristor. Herein, we employ mechanically exfoliated 2D layered GaSe nanosheets to prepare GaSe based three-terminal memtransistors. By using Ag as the electrodes, the memristor exhibits non-volatile bipolar RS characteristics. More importantly, under exposure to air for one week, the RS behaviors are dramatically enhanced with the ON/OFF ratio reaching up to 5.3 × 105 and ultralow threshold electric field of ~3.3 × 102 Vcm-1. The ultralow threshold electric field of GaSe based memristor could be related to the low migration energy of the intrinsic Ga vacancy in p-type GaSe. Moreover, the GaSe-based memristor shows long-term retention (~104 s) and high cycling endurance (~5000 cycles) simultaneously. Hence, the fabricated three-terminal 2D GaSe memtransistors possess high performance with large switching ratios, ultralow threshold electric field, good endurance and long-term retention. Furthermore, the device demonstrates gate tunability in RS characteristics, suggesting the promising applications in multi-terminal electronic devices with low power consumption and complex functionalities, ranging from non-volatile memory, logic device to neuromorphic computing.
关键词： memtransistors,memristors,2D materials,GaSe,resistive switching
更新于2025-09-04 15:30:14
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Solution-processed flexible non-volatile resistive switching device based on poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)]: polyvinylpyrrolidone composite and its conduction mechanism
摘要： Recently, solution-processed resistive switches for wearable electronics have got tremendous attention and are required for different applications due to their easy process and fabrication. Hence, this paper proposes the solution-processed resistive switching memory device based on two polymers, poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)] (F8BT) and polyvinylpyrrolidone (PVP) composite, which is fabricated on a flexible indium–tin–oxide (ITO)-coated polyethylene terephthalate (PET) substrate through spin coating technology. The fabricated device demonstrates a perfect non-volatile bipolar resistive switching through small operating voltage sweeping of ± 1.5 V, and its high-resistance state (HRS) and low-resistance state (LRS) are 92678.89 ? and 337.85 ?, respectively. To verify the non-volatility and long-term stability, the device is checked for more than 700 endurance cycles. During these cycles, the variations of HRS and LRS are 48 ? and 37.35 ?, respectively. The retention time is checked for more than 60 days, and the ROFF/RON ratio is 274.31. The bendability is carried out up to bending diameters < 10 mm, and FESEM is used for the morphological characteristics of the device. Conduction mechanism of the proposed device is supported by space charge-limited conduction (SCLC) which is explained by the log–log I–V slope-fitting curve. The results insure that the F8BT:PVP composite-based resistive switching device is to be a potential candidate for the future flexible and low-power non-volatile resistive switching memory device.
关键词： Resistive switching,Composite,F8BT,Solution-processed,Flexible,Non-volatile,PVP,Conduction mechanism
更新于2025-09-04 15:30:14
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Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering
摘要： The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (101 Ω) and OFF (102 Ω) states during at least 104 s.
关键词： Memristors,Magnetron Sputtering,Magnesium Oxide,Resistive Switching
更新于2025-09-04 15:30:14
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Multiple Resistive Switching Behaviours of CH3NH3PbI3 Perovskite film with Different Metal Electrodes
摘要： The utilization of defects in organic-inorganic hybrid perovskite materials such as CH3NH3PbI3 is beneficial for memory applications. In this work, a simple CH3NH3PbI3 memory device with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au) yielded different switching behaviours. Using Al in ITO/CH3NH3PbI3/Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. Interestingly, by using Ag and Au cathodes to replace Al, yielded Write-Once-Read-Many (WORM) resistive switching characteristics. The conversion process from OFF to ON occur at around 4.7 V and 4.0 V for Ag and Au, respectively. The “shorting effect” remains even though a reverse voltage was applied indicating data retention. These fabricated devices could contribute to further understanding of selecting the right electrodes and open up new possibility of studies in the direction of resistive switching memory applications.
关键词： organic-inorganic perovskite,resistive switching,filamentary conduction,charge trapping
更新于2025-09-04 15:30:14