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Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga <sub/>2</sub> O <sub/>3</sub>
摘要： Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga2O3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga2O3 substrates and for the fabrication of high power β-Ga2O3 devices.
关键词： halide vapor phase epitaxy,Schottky barrier diodes,epitaxy growth,Ga2O3
更新于2025-09-23 15:22:29
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A simulation study of field plate termination in Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes
摘要： In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
关键词： field plate,termination technique,Ga2O3,Schottky barrier diode
更新于2025-09-23 15:22:29
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PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
摘要： In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500°C for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10?8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
关键词： contact resistivity,PdEr-alloy target,RF magnetron sputtering,schottky barrier height,silicide
更新于2025-09-23 15:22:29
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Tunable Schottky barriers in ultrathin black phosphorus field effect transistors via polymer capping
摘要： It is still a great challenge to avoid the degradation of ultrathin black phosphorus (BP) since its discovery in 2014. Various methods have been explored to stabilize the properties of ultrathin BP through capping technology or chemical passivation. Besides, the large metal-semiconductor contact resistance is also one of the critical issues. The two problems hinder the further development of ultrathin BP devices. Herein, we demonstrate that polymethyl methacrylate (PMMA) capping can not only enhance the durability of the ultrathin BP effectively and nondestructively, but also tune the effective Schottky barriers (SBs) formed at the interfaces between the metal and semiconductor dramatically. Particularly, the Schottky barrier (SB) for electron injection from metal to semiconductor is decreased by ~ 13 meV and the performance of the BP field effect transistor (FET) is strongly enhanced with the current on/off ratio increased by 6.8 times for the hole conduction after the PMMA capping. In addition, after the electron beam irradiation to the PMMA layer, the charge neutral point of the BP FET exhibits remarkable negative shift resulting in the electron dominated semiconductor channel at zero gate voltage. Furthermore, through partially capping the BP channel, a prototype of BP p-n diode was demonstrated with a maximum rectification factor of 21.3. The diode performs quite well with just a quarter of the BP channel capped by the PMMA layer. Our findings suggest that the PMMA capped ultrathin BP would be a promising choice for future device applications.
关键词： PMMA capping,ambipolar field effect transistor,ultrathin black phosphorus,Schottky barrier
更新于2025-09-23 15:22:29
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Accurate <i>ab initio</i> determination of ballistic electron emission spectroscopy: Application to Au/Ge
摘要： Ab initio nonequilibrium Keldysh formalism based on an N -order renormalization technique is used to compute I (V ) ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precise experimental measurements under ultrahigh vacuum and low-temperature conditions. At T = 0 K, the ballistic current follows the law (V ? VSB)2.1, VSB being the Schottky barrier. At T > 0 K, temperature effects become signi?cant near the onset and must be taken into account to identify an accurate value for VSB from a best-?t procedure. We ?nd two values for VSB, 0.67 and 0.75 eV, which we associate with two different atomic registries at the interface.
关键词： Au/Ge interface,ab initio,nonequilibrium Keldysh formalism,ballistic electron emission microscopy,Schottky barrier
更新于2025-09-23 15:21:21
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Room temperature spin injection into SiC via Schottky barrier
摘要： Electrical spin injection into and spin extraction from a wide-bandgap semiconductor SiC at room temperature were demonstrated via Schottky junctions. The spin relaxation time of SiC could reach 300 ps, overwhelming that of Si with similar carrier density due to the smaller atomic number. We also found that there existed two channels in SiC/CoFeB Schottky junctions for spin relaxation, one from bulk SiC and the other from interfacial defect states within the barrier whose spin relaxation times were about 1 ns. The bias condition controlled transport channels via bulk or defect states within the barrier and then affected the effective spin relaxation process. Realization of spin injection into SiC shed light on spintronics of wide-bandgap semiconductors such as spin-resolved blue light emitting diodes and high power/temperature spintronics.
关键词： spintronics,SiC,spin injection,Schottky barrier,wide-bandgap semiconductor
更新于2025-09-23 15:21:21
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Tunable thermo-piezo-plasmonic effect on core/shell nanoparticles under laser irradiation and external electric field
摘要： This work is focused on the characterization of the opto-heating generation in thermo-piezo-plasmonic solutions of gold-PbZrTiO3 (PZT) core/shell nanoparticles. Core/shell nanoparticles have been prepared by the laser ablation in liquid method. Linear and nonlinear optical properties of proposed nanoparticles were studied by optical spectroscopy and the Z-scan technique under external voltage to investigate the piezo-photonic effect. Furthermore, the linear optical properties of these nanostructures were calculated vie dipole approximation method with different core size and different shell thickness of samples immersed in water and poly-vinyl-pyrrolidone. In addition, thermo-plasmonic effects of samples are investigated theoretically and experimentally by the finite element method of COMSOL multiphysics V5.4 and infrared camera under laser irradiation and external electric field. The results revealed a clear tunable and adjustable linear and nonlinear behavior and thermo-piezo-plasmonic properties under external effects. The temperature elevation is ranging of ?T = 3.7–14.1 °C under different external effects. Accordingly, these results encourage to uses proposed samples for the cancer treatment and the different biomedical applications.
关键词： Nonlinear refractive index,External electric field,Core/shell NPs,Laser irradiation,Thermoplasmonic,Piezoelectric,Z-scan technique,Schottky barrier
更新于2025-09-23 15:21:01
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Hybrid Single-Layer/Bulk Tungsten Diselenide Transistors by Lithographic Encoding of Material Thickness in Chemical Vapor Deposition
摘要： whose bulk-like (3D) portion can be used for metal contacts and efficient charge injection into the metal dichalcogenide (TMD) transistors; because of the small number of charge carriers in a 2D demonstrate that lithographic pre-patterning of a growth substrate prior to chemical vapor deposition of a TMD film can shape the TMD material into nanoscale hybrid 2D/3D structures enhanced reduction of performance compared to conventional bulk Schottky Barriers. Here we single-layer (2D) areas which serve as transistor channels with excellent mobilities and on-off Schottky-like barriers are an important limitation of the performance of single-layer transition semiconductor, the screening of metal contacts is inefficient leading to large depletion zones and devices (through 300nm of oxide) at realistic operation temperatures near 100°C using ratios. We observe mobilities of nearly 100 cm2V-1s-1 with an on/off ratio >105 for bottom-gated TMD growth. Bulk-like 3D WSe2 is observed to grow at the location of the hafnia, while 2D comparatively long channels (>5 microns) and absent other contact optimization. Our process involves lithographic patterning of a hafnium (IV) dioxide film onto the SiO2/Si substrate prior to allows us to extract Schottky barrier heights and other fundamental properties of our hybrid single-layer material is grown in regions of bare SiO2. Systematic evaluation of transport data devices.
关键词： Tungsten Diselenide,Schottky-Barrier,Transition Metal Dichalcogenides,2D Materials
更新于2025-09-23 15:21:01
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Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays
摘要： The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a p–n junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by 57Co and 241Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.
关键词： photovoltaic mode,Geant 3.21,Schottky barrier,high-purity epitaxial GaAs layers,spectrometry,X and Gamma Rays,p–n junction
更新于2025-09-23 15:21:01
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Determination of the Optimal Sensing Temperature in Pt/Ta2O5/MoO3 Schottky Contacted Nanobelt Straddling Heterojunction
摘要： Nanostructured Schottky barrier gas sensors have emerged as novel semiconductor devices with large surface areas and unique electronic characteristics. Although it is widely known that operating these gas sensors requires heating to an optimal temperature for the highest sensitivity, the fundamental mechanism that governs the temperature-dependent sensitivity has yet been well understood. In this work, we present new evidence to support that thermionic field emission (TFE) is the dominant transport mechanism for Schottky contacted nanostructured heterojunction gas sensors at their optimal sensing temperature. Through the fabrication and characterization of Pt/MoO3 Schottky contacts, and Pt/Ta2O5/MoO3 heterojunctions, we found a previously unreported connection between TFE transport and optimal gas sensing temperature. This connection enables the description of Schottky barrier gas sensing performance using transport theory, which is a major step towards systematic engineering of gas sensors with nanostructured high-k oxide layers.
关键词： nanobelt,Ta2O5,optimal sensing temperature,heterojunction,Schottky barrier,MoO3
更新于2025-09-23 15:21:01